Advanced Micro Devices Corporation

Xilin Judy An

William George En

Srinath Krishnan

Dong-Hyuk Ju

Bin Yu

Concetta E Riccobene

A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The buried insulation layer includes an oxide trap region disposed along an upper surface of the buried insulation layer, the oxide trap region having a plurality of oxide traps to promote carrier recombination.

SOI device with structure for enhancing carrier recombination and method of fabricating same

A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The active layer includes an abrupt region disposed along a lower portion of the active layer, the abrupt region having the same P or N doping type as a doping type of a body region.

A silicon-on-insulator (SOI) transistor. The SOI transistor includes a germanium implanted source and drain having a body disposed therebetween, and a gate disposed on the body, the germanium being implanted at an angle such that the source has a concentration of germanium at a source/body junction and the gate shields germanium implantation in the drain adjacent a drain/body junction resulting in a graduated drain/body junction. Also disclosed is a method of fabricating the SOI transistor.

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San Jose, CA, United States of America

Xilin Judy An