Brewer Science, Inc.

Xie Shao

Tony D Flaim

Terry Lowell Brewer

Jim D Meador

James E Lamb, Iii

Vandana Krishnamurthy

Rama Puligadda

Colin Hester

Runhui Huang

Shreeram V Deshpande

Michelle Fowler

Earnest C Murphy

Douglas J Guerrero

Tingji Tang

Robert Christian Cox

Dongshun Bai

Mandar R Bhave

Kelly A Nowak

James E Iii Lamb

Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.

Self-leveling planarization materials for microelectronic topography

A via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid components. The boiling point of the solvent system is less than the cross-linking temperature of the composition. Preferred solvents for use in the solvent system include those selected from the group consisting of alcohols, ethers, glycol ethers, amides, ketones, and mixtures thereof. Preferred polymer binders are those having an aliphatic backbone and a molecular weight of less than about 80,000, with polyesters being particularly preferred. In use, the fill composition is applied to the substrate surfaces forming the contact or via holes as well as to the substrate surfaces surrounding the holes, followed by heating to the composition reflow temperature so as to cause the composition to uniformly flow into and cover the hole-forming surfaces and substrate surfaces. The composition is then cured, and the remainder of the dual damascene process is carried out.

Crosslinkable fill compositions for uniformly protecting via and contact holes

An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Non-aromatic chromophores for use in polymer anti-reflective coatings

An improved via and contact hole fill composition and method for using the composition in the dual damascene production of circuits is provided. Broadly, the fill compositions include a quantity of solid components including a polymer binder and a solvent system for the solid components. The boiling point of the solvent system is less than the cross-linking temperature of the composition. Preferred solvents for use in the solvent system include those selected from the group consisting of alcohols, ethers, glycol ethers, amides, ketones, and mixtures thereof. Preferred polymer binders are those having an aliphatic backbone and a molecular weight of less than about 80,000, with polyesters being particularly preferred. In use, the fill composition is applied to the substrate surfaces forming the contact or via holes as well as to the substrate surfaces surrounding the holes, followed by heating to the composition reflow temperature so as to cause the composition to uniformly flow into and cover the hole-forming surfaces and substrate surfaces. The composition is then cured, and the remainder of the dual damascene process is carried out.

Fill material for dual damascene processes

Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, &#x3b1;-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

Anti-reflective coating composition with improved spin bowl compatibility

Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted epoxide groups. In another embodiment, the polymers further comprise recurring monomers comprising epoxide rings reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.

Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings

Anti-reflective compositions are prepared from cellulosic binders with improved etch rates.

Fast-etching, thermosetting anti-reflective coatings derived from cellulosic binders

Thermosetting, bottom-applied polymeric anti-reflective coatings exhibiting high optical density, rapid plasma etch rates, high solubility in preferred coating solvents, excellent feature coverage, and improved stability in solution are disclosed. The principal component of these new anti-reflective coatings is a polyester resin produced by the reaction of one or more difunctional aliphatic carboxylic acids with a stoichiometric excess of a di- and/or a trifunctional aliphatic primary alcohol, wherein at least one of the dicarboxylic acids may contain a reactive methylene (--CH.sub.2 --) group. The resulting polyester resin reaction product is further modified by attaching light-absorbing groups to some or all of the reactive methylene groups (if present) and/or hydroxy groups present on the resin. The dye-attached polyester resin is combined with an aminoplast crosslinking agent and acid catalyst in a suitable solvent system to form the final anti-reflective coating.

Thermosetting polyester anti-reflective coatings for multilayer

A method for making multilayer resist structures for microlithographic processing using a thermosetting anti-reflective coating is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

Method for making multilayer resist structures with thermosetting

Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate with grafted dyes.

Thermosetting anti-reflective coatings at deep ultraviolet

Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.

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Rolla, MO, United States of America

Xie Shao