Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Xiaoyuan Zhang

Wenhai Mei

Zhenqi Zhang

Aidi Zhang

Haowei Wang

Hu Meng

A light emitting device, including a first electrode, a first carrier transport layer, a light emitting layer, a second carrier transport layer, and a second electrode, in this order, where a rate of injecting first carriers into the light emitting layer by the first carrier transport layer is greater than a rate of injecting second carriers into the light emitting layer by the second carrier transport layer; the light emitting device further includes an interface layer on a side of the light emitting layer close to the second carrier transport layer; the interface layer includes a first material, which is capable of reacting with the first carriers under a preset condition, such that an energy level of the first material is changeable; and a transport rate of the first carriers in the interface layer is less than a transport rate of the first carriers in the first carrier transport layer.

Light emitting device, manufacturing method thereof, display substrate and display apparatus

A method of patterning a light-emitting layer and a method of manufacturing a light-emitting diode device are provided, including: providing a substrate; forming a first electrode layer on the substrate; forming a sacrificial layer on the first electrode layer; patterning the sacrificial layer to remove the sacrificial layer in a first region of the substrate and retain the sacrificial layer in a second region of the substrate, the first electrode layer is at least partially located in the first region; forming a first carrier auxiliary layer in the first region and the second region; forming a light-emitting layer on the first carrier auxiliary layer, and removing the retained sacrificial layer in the second region and the first carrier auxiliary layer and the light-emitting layer covering the retained sacrificial layer, and retaining the first carrier auxiliary layer and the light-emitting layer in the first region, to pattern the light-emitting layer.

Method of patterning light emitting layer, and method of manufacturing light-emitting diode device

Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer

Embodiments of the present disclosure provide a quantum dot ligand, a quantum dot material, and a quantum dot light emitting device. In a quantum dot ligand of general formula (I), n is 1, 2, 3, or 4; two of X, Y, and Z are G1 group and G2 group, respectively, and the remaining one is selected from the group consisting of G1 group, G2 group, and hydrogen, wherein the G1 group, for each occurrence, is independently selected from —(CH)-L-(CH)—R, wherein Ris a coordination group, m is 0 to 6, n is 0 to 6, and L is a divalent group or absent; the G2 group, for each occurrence, is independently selected from a Calkyl having a carbon chain with more than 4 carbon atoms.

Quantum dot ligand, quantum dot material and quantum dot light emitting device

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Ligand, ligand quantum dot, quantum dot layer and method for patterning the same

A method for manufacturing a quantum dot film is provided. A substrate plate is provided. A plurality of quantum dot material layers capable of emitting light having different colors are sequentially formed on the substrate plate, wherein at least one of the quantum dot material layers includes a plurality of quantum dots. A local crosslinking process is performed on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer. A fluorescence quenching process is performed on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. A display panel and a method for manufacturing the same are also provided.

Quantum dot film, display panel and method for manufacturing the same

Disclosed are a quantum dot display panel, a manufacturing method thereof and a display device. The manufacturing method includes: forming a first functional layer on a substrate; processing the first functional layer so that the first functional layer includes a processed region and the processed region includes ions having a first polarity; forming a quantum dot layer having a second polarity in the processed region. The second polarity and the first polarity are opposite electrical polarities.

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Beijing, China

Xiaoyuan Zhang