Western Digital Technologies, Inc.

Hgst Netherlands, B.v.

Xiaoyu Xu

Quang Le

Cherngye Hwang

Kuok San Ho

Brian Rodrick York

Xiaoyong Liu

Michael Gribelyuk

Hisashi Takano

Randy G Simmons

Sue Siyang Zhang

Ning Shi

Susumu Okamura

Nam Hai Pham

Son T Le

Huy H Ho

Khang H D Nguyen

Julian Sasaki

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

Highly textured 001 BiSb and materials for making same

The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a () orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the () orientation. The BiSbE layer may be formed on a texturing layer to ensure the () orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the () orientation of the doped BiSbE layer.

Doping process to refine grain size for smoother BiSb film surface

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GeNiFe layers, where at least one GeNiFe layer is disposed in contact with the BiSb layer. The GeNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GeNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GeNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GeNiFe layer allows the crystal orientation of the BiSb layer to be selected.

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

SOT reader using BiSb topological insulator

The present invention generally relates to a method for forming a smooth gap of a damascene write pole. An opening having a side wall with a first angle with respect to vertical is formed in a fill layer, and a first non-magnetic layer is deposited into the opening by ion beam deposition. The ion beam is delivered to the side wall at a second angle with respect to vertical. The ratio of the first angle to the second angle ranges from about 250 to about 3.5.

Method for producing a smooth Ru side gap of a damascene writer pole

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San Jose, CA, United States of America

Xiaoyu Xu