Fudan University

Xiaoyong Liu

Pengfei Wang

Wei Zhang

Wei Wang

Xi Lin

Qingqing Sun

The disclosure belongs to the technical field of semiconductor power devices, specifically relates to a semi-floating-gate power device, and comprises the gallium nitride high-electron-mobility transistor, the diode and the capacitor; the anode of the diode is connected with the gate of the gallium nitride high-electron-mobility transistor and the cathode of the diode is connected with the source or the channel area of the gallium nitride high-electron-mobility transistor; one end of the capacitor is connected with the gate of the gallium nitride high-electron-mobility transistor and the other end of the capacitor is connected with the external voltage signal. The semi-floating-gate power device has a simple structure, is easy to manufacture, adapts to high-voltage and high-speed operation and has very high reliability, can increase the threshold voltage of the gallium nitride high-electron-mobility transistor in the working state, so that the transistor can serve as the power switch tube better.

Semi-floating-gate power device and manufacturing method therefor

The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.

Photo detector consisting of tunneling field-effect transistors and the manufacturing method thereof

This invention belongs to semiconductor device manufacturing field and discloses a method for manufacturing a gate-control diode semiconductor storage device. When the floating gate voltage is relatively high, the channel under the floating gate is of n type and a simple gate-control pn junction structure is configured; by controlling effective n-type concentration of the ZnO film through back-gate control, inverting the n-type ZnO into p-type through a floating gate and using NiO as a p-type semiconductor, an n-p-n-p doping structure is formed while the quantity of charges in the floating gate determines the device threshold voltage, thus realizing memory functions. This invention features capacity of manufacturing gate-control diode memory devices able to reduce the chip power consumption through advantages of high driving current and small sub-threshold swing. This invention is applicable to semiconductor devices manufacturing based on flexible substrate and flat panel displays and floating gate memories, etc.

Growing community of inventors

Shanghai, China

Xiaoyong Liu