Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Shanghai Huali Integrated Circuit Corporation

Semiconductor Manufacturing (shanghai) Corporation

Xiaoying Meng

Qiuhua Han

Haiyang Zhang

Junqing Zhou

Heng Liu

Tianpeng Guan

Jianghua Leng

Zhigang Yang

A method for making a semi-floating gate transistor with a three-gate structure is disclosed, comprising: forming a first trench structure in isolated active regions and a first polysilicon layer, removing part of the first polysilicon layer; forming a second gate oxide layer and a second polysilicon layer; patterning isolation trench; filling an isolation dielectric layer in the isolation trench; and forming a trench between two first trench structures, to cut open the second polysilicon layer, the second gate oxide layer, the first polysilicon layer and the first gate oxide layer into two parts, so that the active region is exposed from the bottom of the trench, wherein the first polysilicon layer on either side of the trench forms a first gate, and portions of the second polysilicon layer on both sides of the isolation trench form a second gate and a third gate.

Method for making semi-floating gate transistor with three-gate structure

A method is provided for fabricating stripe structures. The method includes providing a substrate; and forming a to-be-etched layer on the substrate. The method also includes forming a hard mask pattern having a first stripe on the to-be-etched layer; and forming a photoresist pattern having a stripe opening on the to-be-etched layer and the hard mask pattern having the first stripe. Further, the method includes forming a polymer layer on a top surface and side surfaces of the photoresist pattern to reduce a width of the stripe opening; forming hard mask patterns having a second stripe by etching the hard mask pattern having the first stripe using the photoresist pattern having the polymer layer as an etching mask; and forming the stripe structures by etching the to-be-etching layer using the hard mask pattern having the second stripe as an etching mask until the substrate is exposed.

Semiconductor device including stripe structures

Various embodiments provide a semiconductor structure having a common gate and fabrication method of the semiconductor structure. In an exemplary method, after forming a first metal gate and a second metal gate, a conductive material layer can be formed at least at the boundary between the first metal gate and the second metal gate. Thus, one end of the conductive material layer can be connected to a first metal gate electrode, and the other end of the conductive material layer can be connected to a second metal gate electrode. The resistance between the first metal gate electrode and the second metal gate electrode can be effectively reduced. Gate voltages of an NMOS transistor and a PMOS transistor of the common gate can be the same.

Semiconductor structure having common gate

A method of manufacturing semiconductor device and a wafer are provided in accordance with embodiments of the present invention, which relates to semiconductor technology. The method includes: providing a substrate, and forming a gate oxide layer and a polysilicon layer on a first surface of the substrate; etching the polysilicon layer by use of a patterned mask so as to form a polysilicon gate with reentrants; depositing a tensile stress film on a second surface of the substrate before etching the polysilicon layer. The tensile stress film can be deposited on the second surface of the substrate for generating the tensile stress for the wafer. Thus, a polysilicon gate with reentrants can be formed in etching process. In this way, semiconductor devices can have smaller gate-source/drain overlap capacitance and better TDDB parameters, and the performance of the devices can be improved.

Method of manufacturing semiconductor device and wafer

Stripe structures and fabrication method thereof

Semiconductor structure having common gate and fabrication method thereof

A pattern formation method, mask pattern formation method and a method for manufacturing semiconductor devices are provided in this disclosure, which are directed to the field of semiconductor processes. The pattern formation method comprises: providing a substrate; forming a polymer thin film containing a block copolymer on the substrate; forming a first pattern through imprinting the polymer thin film with a stamp; forming domains composed of different copolymer components through directed self assembly of the copolymer in the first pattern; selectively removing the domains composed of copolymer components to form a second pattern. In the embodiments of the present invention, finer pitch patterns can be obtained through combining the imprinting and DSA process without exposure, which as compared to the prior art methods has the advantage of simplicity. Furthermore, stamps used in imprinting may have relative larger pitches, facilitating and simplifying the manufacture and alignment of the stamps.

Method for forming pattern and mask pattern, and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device comprises placing a semiconductor substrate in an ashing chamber, the semiconductor substrate having a gate, a silicon nitride gate sidewall offset spacer or a silicon nitride gate sidewall pacer formed thereon, and a photo resist residue remaining on the semiconductor substrate, introducing a gas mixture including Dor Tinto the ashing chamber, and ashing the photo resist residue using a plasma that is formed from the gas mixture. The gas mixture can include a deuterium gas or a tritium gas having a volume ratio ranging between about 1% and about 20%. Embodiments can reduce Si recess and the loss of silicon nitride thin film during ashing.

Growing community of inventors

Shanghai, China

Xiaoying Meng