Asml Netherlands B.v.

Xiaoyang Jason Li

Duan-Fu Stephen Hsu

Frank Staals

Rafael C Howell

Christoph Rene Konrad Cebulla Hennerkes

Zhan Shi

A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

Wavefront optimization for tuning scanner based on performance matching

A method for optimizing a patterning device pattern, the method including obtaining an initial design pattern having a plurality of polygons, causing at least some of the polygons to be effectively connected with each other, placing evaluation features outside the boundaries of the polygons, and creating a patterning device pattern spanning across the connected polygons based on the evaluation features.

Method for optimizing a patterning device pattern

The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. Self-aligned assist pattern (SAP) is derived from original design layout in an automated manner using geometric Boolean operations based on some predefined design rules, and are included in the mask layout for efficient self-alignment of various sub-layouts of the target pattern during a multiple patterning lithography process. SAP can be of any shape and size, and can have continuous features (e.g., a ring), or discontinuous (e.g., bars not connected to each other) features. An end-to-end multiple patterning lithography using spacer and SAP may use positive tone lithography, and/or negative tone lithography for line and/or space printing.

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Mountain View, CA, United States of America

Xiaoyang Jason Li