Peking University

The Procter Gamble Company

Beijing Naura Microelectronics Equipment Co., Ltd.

Boe Technology Group Co., Ltd.

Nippon Shokubai Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Beijing Sevenstar Electronics Co., Ltd.

Beijing Dabeinong Technology Group Co., Ltd

Beijing Dabeinong Technology Group Co., Ltd., Biotech Center

Beijing Green Agrosino Plant Protection Technology Co., Ltd

Xiaoyan Liu

Jinfeng Kang

Lifeng Liu

Bin Gao

Bing Chen

Peng Huang

Yi Ke Wu

Xiaoli Wang

Feifei Zhang

Wei Liu

Yi Wang

Peng Qin

Akiko Hemmi

Xu Huang

Hirotaka Mizoguchi

Li Lv

Amaranta Ramirez-Almaraz

Runze Han

Gang Du

Liqiao Liu

Rika Matsumoto

Xianling Zhai

Jie Chen

Xing Zhang

Brian Joseph Loughnane

Patrick Christopher Stenger

Bing Jiang Sun

Jeffrey Scott Dupont

Atsuro Yoneda

Xiaoming Bao

Praveen Kumar Depa

Qing Tao

Daisuke Michitaka

Na Wang

Derong Ding

Qingchao Meng

Wenjie Wang

William Coffin Shearouse

Yechun Wu

Yulin Feng

Yi Hou

Dengyuan Wang

Dedong Han

Xiaojun Su

Jincun Huang

Yuhua Cheng

Chengwei Zhang

Yanxun Li

Xiaomin Feng

Yandong He

Ganggang Zhang

Yuansha Chen

Jiaqi Yang

Jingfeng Yang

Yachen Xiang

Yizhou Zhang

Bonny Kay Lui

Mark Allen Smerznak

Rachel Marie Hiler

Stacey Lee Vosters

An operating circuit and an operating method of a resistive random-access memory are provided, the operating circuit includes: at least one capacitance connected in series with the resistive random-access memory, so that the resistive random-access memory is grounded through the at least one capacitance. The operating method includes: connecting at least one capacitance in series with a resistive random-access memory, so that the resistive random-access memory is grounded through the capacitance; applying a forming pulse voltage or a set pulse voltage on the resistive random-access memory to achieve a forming operation or a set operation of the resistive random-access memory.

Operating circuit and operating method of resistive random access memory

The present application discloses a UTBB photodetector pixel unit, array and method, including: a silicon film layer, a buried oxide layer, a charge collection layer and a substrate, the silicon film layer, the buried oxide layer, the charge collection layer and the substrate being arranged in sequence from top to bottom; the silicon film layer includes NMOS transistors or PMOS transistors; the charge collection layer includes charge collection control regions and charge accumulation regions; and the substrate includes an N-type substrate or a P-type substrate. A centripetal electric field is formed around the charge accumulation regions, and photo-generated charges are accumulated in the corresponding pixel units under the action of the centripetal electric field. The existence of the centripetal electric field improves the photoelectric conversion efficiency, suppresses the crosstalk between pixels, saves the area of shallow trench isolation, reduces the size, and makes it more suitable for sub-micron pixels.

UTTB photodetector pixel unit, array and method

A system and a method for compressing an image based on a FLASH in-memory computing array are provided. The system includes: a convolutional neural network for encoding of the FLASH in-memory computing array, a convolutional neural network for decoding based on the FLASH in-memory computing array, and a quantization module; the convolutional neural network for encoding based on the FLASH in-memory computing array is configured to encode an original image to obtain a feature image; the quantization module is configured to quantize the feature image to obtain a quantized image; the convolutional neural network for decoding based on the FLASH in-memory computing array is configured to decode the quantized image to obtain a compressed image.

System and method for compressing image based on flash in-memory computing array

The present application discloses a pixel unit and a signal processing method for a pixel unit. The pixel unit includes at least one pixel, and the pixel includes: an N-type main pixel, a P-type main pixel, and a sub-pixel; and the sub-pixel is located between the N-type main pixel and the P-type main pixel; or the pixel includes at least a first pixel and a second pixel that are adjacent to each other; the first pixel includes an N-type main pixel, and the second pixel includes a P-type main pixel; the first pixel and the second pixel share one sub-pixel; the sub-pixel is configured to generate and output a signal difference between the N-type main pixel and the P-type main pixel according to the current. By adding a sub-pixel between two main pixels, the sub-pixel generates and outputs the signal difference between the N-type main pixel and the P-type main pixel according to the current sent by the two main pixels, so that the received signal can be efficiently processed directly to reduce the amount of output data. Since there is no need to increase a circuit, the pixel area will not increase due to a complicated circuit.

Pixel unit and signal processing method for pixel unit

A spray device includes a spray assembly. The spray assembly is configured to spray cleaning liquid towards a to-be-cleaned surface of a to-be-processed workpiece. The spray assembly includes a spray head and multiple liquid inlet pipelines. The spray assembly is configured to spray cleaning liquids with different concentrations, temperatures, and/or flow rates corresponding to different positions in a radial direction of the to-be-cleaned surface to cause a cleaning rate of the cleaning liquids at the different positions in the radial direction of the to-be-cleaned surface to be consistent.

Spray device and cleaning apparatus

The present disclosure provides a spray device and a cleaning apparatus. The spray device includes an atomization structure, which is configured to atomize a cleaning liquid when the cleaning liquid is sprayed to form liquid droplets, and a jet structure, which is configured to spray a gas along a determined direction to cause the gas sprayed to collide with the liquid droplets to form atomized particles. The spray device provided by the present disclosure may increase cleaning uniformity and cleaning efficiency to improve cleaning process results, and may further reduce an impact force to the to-be-cleaned surface by the liquid droplets to a certain level. Thus, the damage to a surface pattern of a wafer may be reduced.

The present disclosure relates to the field of semiconductor integrated circuits and manufacturing technologies thereof, and discloses a method and device for realizing a convolution operation based on an NOR flash storage structure. The NOR flash array has a structure of an array composed of a plurality of NOR flash cells. The convolution operation method includes: storing elements of a convolution kernel matrix into the NOR flash cells; converting elements of an input matrix into voltages and applying the voltages to gate terminals of the NOR flash cells; applying a driving voltage to source terminals of the NOR flash cells; and collecting, via drain terminals of the NOR flash cells, current values of each column to obtain a convolution operation result.

Convolution operation method based on NOR flash array

The present disclosure provides a data search system and a data search method for determining whether there is stored information data matched with query information data in a storage circuit. The data search system comprises a storage circuit, a control circuit, and a feature extraction circuit, wherein the storage circuit comprises at least one storage unit which comprises a memristor crossbar array, a read/write unit, a decoder and a multiplexer, and the feature extraction circuit is configured to extract feature values of the query data. In the data search method, both the data matching process and the data storage process are performed in the memristor crossbar array under the control of the control circuit, which thus largely reduces the amount of data transmission while greatly improving the speed of data search using the characteristics of parallel calculation of the memristor crossbar array.

Data search systems and methods

A sulfonate group-containing copolymer is provided which comprising a structural unit (a) derived from a sulfonate group-containing monomer (A); a structural unit (b) derived from a (poly)oxyalkylene monomer (B); a structural unit (c) derived from a carboxyl group-containing monomer (C). The sulfonate group-containing copolymer comprises from 20% to 90% by mass in an acid form equivalent of the structural unit (c) in 100% by mass of all the structural units constituting the sulfonate group-containing copolymer. The product (P&#xd7;Mw&#xd7;n) of the ratio by mass P of the structural unit (b) to the structural unit (a) multiplied by the weight average molecular weight Mw of the sulfonate group-containing copolymer multiplied by the value n is from 950,000 to 800,000,000.

Sulfonate group-containing polymer and method of producing the same

Liquid laundry detergent compositions containing a microcapsule with a cationically charged coating and a fluorescent brightener with a distyrylbiphenyl unit, preferably Fluorescent Brightener-49, are provided. The compositions provide improved delivery efficiency of microcapsules and brightening of fabric whilst minimizing phase stability issues.

Laundry detergent

Liquid laundry detergent compositions containing a microcapsule with a cationically charged coating and a fluorescent brightener with a distyrylbiphenyl unit, preferably Fluorescent Brightener-49, are provided. The compositions provide improved delivery efficiency of microcapsules and brightening of fabric while minimizing phase stability issues.

The present invention relates to a detergent or cleaning composition, preferably a liquid laundry detergent composition, comprising a sulfonate group-containing copolymer, which is useful in improving anti-soil redeposition in high water hardness conditions and whiteness maintenance benefit of such detergent or cleaning composition. Processes for making and methods of using the detergent or cleaning composition are also encompassed by the present invention.

Laundry detergents and cleaning compositions comprising sulfonate group-containing polymers

The present disclosure discloses a full adder based on resistive-switching devices and an operation method thereof. A multi-bit full adder circuit is constituted by using a cross-bar array of resistive-switching devices, wherein data of standard sums is stored on the principle diagonal of the cross-bar array in a nonvolatile manner, and carry data is stored in adjacent units on both sides of the principle diagonal. The carry data is stored according to whether the storage loop (crosstalk loop) is turned on. With the present disclosure, the multi-bit full adder circuit is significantly simplified. Thereby, additional circuits for generating a carry signal are reduced, the circuit delay and chip area are decreased, and the adder has an ability of nonvolatile storage.

Multi-bit full adder based on resistive-switching devices and operation methods thereof

Some embodiments of the present invention can include herbicide-resistant proteins, coding genes, and uses thereof. Certain herbicide-resistant proteins can comprises: (a) a protein consisting of an amino acid sequence shown in SEQ ID NO: 2; or (b) a protein consisting of an amino acid sequence at least 90% identical to that set forth in SEQ ID NO: 2. Other herbicide-resistant proteins of this disclosure can be suitable for expression in plants, can have resistance to herbicides (e.g., to phenoxy auxinherbicides), or both.

Herbicide-resistant proteins, encoding genes, and uses thereof

There are provided a pixel unit driving circuit and driving method, pixel unit and display apparatus. The pixel unit driving circuit is used for driving a light-emitting device to emit light, and comprises a first thin film transistor (T), a second thin film transistor (T), a third thin film transistor (T) and a storage capacitor (Cs). A gate of the first thin film transistor (T) is connected with a control line (Gate), a first electrode thereof is connected with a data line (Data), and a second electrode thereof is connected with a first node (A). One gate of the second thin film transistor (T) is connected with the control line (Gate) and the other gate is connected with a second scan line (Scan), a first electrode thereof is connected with the storage capacitor (Cs), and a second electrode thereof is connected with a second node (B). One gate of the third thin film transistor (T) is connected with the first node (A) and the other gate is connected with the second scan line (Scan), a first electrode thereof is connected with a power supply (Vdd), and a second electrode thereof is connected with the second node (B). One terminal of the storage capacitor is connected with the first node (A), and the other terminal is connected with the first electrode of the second thin film transistor (T). One terminal of the light-emitting device is connected with the second node (B), and the other terminal thereof is grounded. The pixel unit driving circuit can reduce an influence on a driving voltage caused by variations in threshold voltage.

Pixel unit driving circuit and driving method, pixel unit and display apparatus

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Beijing, China

Xiaoyan Liu