Xiamen Sanan Optoelectronics Technology Co., Ltd.

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Xiaoxiong Lin

Jiansen Zheng

Anhe He

Kangwei Peng

Su-Hui Lin

Suhui Lin

Chenke Hsu

Chen-Ke Hsu

Chia-Hung Chang

Kang-Wei Peng

Ling-Yuan Hong

Gaolin Zheng

Feng Wang

A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.

Flip-chip LED structure and fabrication method

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.

Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip

A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer and a light emitting layer between the first semiconductor layer and the second semiconductor layer; at least one opening structure, which is at the epitaxial layer edge and extends to the substrate surface, making parts of the side wall of the epitaxial layer and the substrate surface exposed, such that the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer on the opening structure as the metal electrode isolating layer.

Flip-chip LED with barrier structure

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.

A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is &#x2265;3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.

High-voltage light emitting diode and fabrication method thereof

A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

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Xiamen, China

Xiaoxiong Lin