Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Xiaoxing Zhang

Xingyu Zhou

Jia Tang

Jangsoon Im

Liangfen Zhang

Yingchun Fan

Yuan Jun Hsu

Songshan Li

Yuanjun Hsu

Kunpeng He

Letao Zhang

Yadi Zhang

Zhilin Zheng

The present disclosure relates to a top emitting AMOLED display panel, a manufacturing method thereof, and a display device. The top emitting AMOLED display panel includes a passivation layer and a protective conductive layer. The passivation layer is sandwiched between an interlayer insulating layer and a planarization layer of the top emitting AMOLED display panel; the protective conductive layer covers a metal layer and side walls of openings. The passivation layer covering the metal layer can physically protect and prevent the metal layer from oxidation, and the protective conductive layer coats the metal layer to prevent the metal layer from being etched or oxidized by anode etching solution.

Top emitting AMOLED display panel, manufacturing method thereof, and display device

An OLED display device including an OLED pixel driving circuit is provided. A driving thin film transistor in the OLED pixel driving circuit is configured as a double gate oxide thin film transistor, and a switch thin film transistor is configured as a top gate self-aligned oxide thin film transistor. A manufacturing method of a TFT array substrate is also provided, and the TFT array substrate is used for preparing the OLED display device.

OLED display device and manufacturing method of TFT array substrate

The present disclosure relates to an OLED display panel. The OLED display panel includes a TFT array substrate, and a flat layer on the TFT array substrate. The flat layer includes a first flat layer and a second flat layer on the first flat layer. A viscosity of the first flat layer is less than a viscosity of the second flat layer. In addition, the present disclosure also relates to a manufacturing method of the OLED display panel to enhance the performance of the OLED display panel.

Organic light emitting diode (OLED) display panel and the manufacturing method thereof

The embodiments of the disclosure provides a method of manufacturing an OLED panel and an OLED panel. The method includes: forming an anode electrode connected to a source electrode of a TFT and a bridge electrode connected to an auxiliary electrode on a TFT substrate; forming a plurality of metal protrusions on the bridge electrode, the surfaces of the metal protrusions having a plurality of corners; sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the bridge electrode and the metal protrusions; and applying a voltage on the auxiliary electrode or the bridge electrode to burn a portion of the electron transport layer and a portion of the electron injection layer corresponding to the corners of the metal protrusions to connect the cathode electrode and the auxiliary electrode.

Method of manufacturing an OLED panel and OLED panel

A method of manufacturing an OLED panel and an OLED panel are provided. The method includes forming an anode connected to a source of a TFT, and a strap electrode connected to an auxiliary electrode on a TFT substrate. A sharp shaped corner is formed on the strap electrode, therefore an area of the electron transport layer and the electron injection layer corresponding to the sharp shaped corner have a thinner thickness. By applying a voltage between the auxiliary electrode and the cathode, the electron transport layer and the electron injection layer corresponding to the sharp shaped corner are punctured, the cathode is directly connected to the strap electrode and further conducted to the auxiliary electrode, resulting in a signal is inputted to the cathode through the auxiliary electrode during display. The problem of uneven display of the OLED panel due to the IR drop of the cathode is improved.

Method of manufacturing an OLED panel and an OLED panel

A manufacturing method for an inkjet printing AMOLED display panel is disclosed. The method includes steps of: manufacturing a TFT backplane, and manufacturing an anode on the TFT backplane; manufacturing a spacer layer for isolating the anode from a pixel definition layer on the anode; manufacturing a pixel definition layer on the TFT backplane, and the pixel definition layer covers the spacer layer; patterning the pixel definition layer to form a notch on the pixel definition layer in order to expose the spacer layer; etching the spacer layer below the notch by an etching solution; and forming an ink layer on the anode by an inkjet printing method. The invention can improve the cleanliness of the anode surface in the AMOLED display panel, reduce the residue, and make the printed light-emitting layer easier to spread evenly, prevent the AMOLED display panel from displaying abnormality.

Manufacturing method for an inkjet printing AMOLED display panel

The present invention provides a method for manufacturing an organic light emitting diode (OLED) display panel, the method comprises: a step Sof providing a thin film transistor (TFT) array substrate, the TFT array substrate comprising protrusions formed on a surface of the TFT array substrate; a step Sof forming a first planarization layer on the surface of the TFT array substrate; and a step Sof forming a second planarization layer on a surface of the first planarization layer.

Organic light emitting diode (OLED) display panel having protrusions on substrate with plurality of planarization layers and method for manufacturing same

A thin film transistor array substrate and a display panel are provided. The thin film transistor array substrate includes a substrate, a thin film transistor, a scan line, a data line and a pixel electrode. The thin film transistor includes a semiconductor member, a gate electrode, a source electrode and a drain electrode. The source electrode and the drain electrode include a first extension portion and a second extension portion, respectively. The first extension portion and the second extension portion are configured to block light that is emitted toward an electron migration channel of the thin film transistor. Thus, external light emitting toward the electron migration channel can be prevented.

Thin film transistor array substrate and display panel

The invention provides a TFT backplane and manufacturing method thereof, wherein the TFT backplane comprises a substrate (); a gate () and a first metal electrode () formed on the substrate (); a gate insulating layer () formed on the substrate () and covering the gate () and the first metal electrode (), the gate insulating layer () on the first metal electrode () having a thickness less than thickness of the gate insulating layer () on the gate (); an etch stop layer (ESL) () on the gate insulating layer () and a second metal electrode () on the ESL (). Only a portion of the gate insulating layer deposited on the first metal electrode is etched away, and the first metal electrode always protects the gate insulating layer, so that the first metal electrode is not damaged by the etching gas, favorable for the final storage capacitor.

TFT backplane and manufacturing method thereof

An OLED display and manufacture method thereof are provided. The OLED display includes a TFT substrate, the TFT substrate having a plurality of light-blocked pixel isolation layers and a plurality of OLED emissive layers on a surface thereof, and each OLED emissive layer having cathode on a surface thereof. The light-blocked pixel isolation layer includes a wall portion, and the wall portion having a light-blocked portion on a surface thereof. The TFT substrate has a plurality of pixel regions surrounded by the wall portions of the light-blocked pixel isolation layers on the surface thereof. Each pixel region respectively has the OLED emissive layer therein. The OLED display and method avoid light leakage caused by the oblique light of each pixel region emitted into adjacent pixel regions while the OLED emissive layer lighting.

OLED display with light-blocked pixel isolation layer and manufacture method thereof

A method for manufacturing a LTPS TFT substrate is provided. Buffer layers are respectively provided in a drive TFT area and a display TFT area and have different thicknesses, such that the thickness of the buffer layer in the drive TFT area is larger than the thickness of the buffer layer in the display TFT area so that different temperature grades are formed in a crystallization process of poly-silicon to achieve control of the grain diameters of crystals. A poly-silicon layer that is formed in the drive TFT area in the crystallization process has a large lattice dimension to increase electron mobility thereof. Fractured crystals can be formed in a poly-silicon layer of the display TFT area in the crystallization process for ensuring the uniformity of the grain boundary and increasing the uniformity of electrical current. Accordingly, the electrical property demands for different TFTs can be satisfied.

Low temperature poly-silicon TFT substrate structure and manufacture method thereof

The present invention provides an OLED substrate and a manufacture method thereof. In the manufacture method of the OLED substrate of the present invention, by configuring the silicon film on the top surface of the pixel definition layer to make the top surface possess the excellent hydrophobic characteristic, the OLED material mistakenly sprayed onto the silicon film of the top surface does not stay on the silicon film but quickly falls into the pixel region of the substrate when the OLED material is ink jet printed in the pixel regions of the substrate to effectively prevent the issue that the OLED material stays on the top surface of the pixel definition layer or even slides into the adjacent pixel region to result in color mixing. In the OLED substrate, the color purity of the OLED light emitting layer is high and there is no problem of color mixing.

OLED substrate and manufacture method thereof

A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the display TFT region are manufactured with different technologies, so that different requirements for TFT can be met. The manufacturing method according to the present disclosure mainly includes: forming a first amorphous silicon layer to obtain a drive TFT region; forming a second amorphous silicon layer to obtain a display TFT region; and then depositing a passivation layer and a flat layer, so that the TFT substrate is manufactured after following treatment steps.

Method for manufacturing TFT substrate

The invention provides an OLED panel manufacturing method and OLED panel. The method comprises: forming first () and second () pixel electrodes inside each pixel unit (); depositing an insulation film by an atomic layer deposition method, and patternizing to form a pixel electrode isolation insulation layer (); the pixel electrode isolation insulation layer having a longitudinal portion () filling between the first () and second () pixel electrodes, and a latitudinal portion () having both ends covering respectively a part of the first pixel electrode () closer to the second pixel electrode () and a part of the second pixel electrode () closer to the first pixel electrode (); forming a pixel isolation layer (), and printing LOED elements (); the invention can increase OLED panel resolution without changing printing accuracy so that the first () and second () pixel electrodes are completely insulated.

OLED panel manufacturing method and OLED panel

The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

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Shenzhen, China

Xiaoxing Zhang