Micron Technology Incorporated

Xiaoxin Zou

Woei Chen Peh

Andrew M Kowles

Zaihas Amri Fahdzan Bin Hasfar

Eng Hong Tan

Chandra Mouli Guda

Devices, methods, and media are described for runtime memory allocation to avoid defects. One embodiment includes assigning a plurality of memory blocks of a memory sub-system to a plurality of erase groups, such that each erase group of the plurality of erase groups comprises two or more memory blocks of the plurality of memory blocks. A bad block association is determined for each erase group of the plurality of erase groups. Prior to a memory condition being met, memory resources of the memory sub-system are allocated by erase group based on a first set of criteria which are based at least in part on the bad block association for each erase group in order to prioritize use of erase groups with fewer bad blocks. After the memory condition has been met, the memory resources of the memory sub-system are then allocated by erase group according to a second set of criteria, wherein the second set of criteria allocates the memory resources irrespective of bad block association for each erase group after the determining that the memory condition has been met.

Runtime memory allocation to avoid and delay defect effects in memory sub-systems

A memory device includes a plurality of memory die blocks and a plurality of memory channels operably coupled to the plurality of memory die blocks and a memory controller configured to identify one or more memory die blocks as being invalid. The memory controller obtains a first matrix storing a mapping of memory channels to memory die blocks and creates a new mapping of memory channels to memory die blocks excluding the invalid memory die blocks. The new mapping is stored in a second matrix and one or more operations are performed on the memory die blocks based on the new mapping.

Growing community of inventors

Singapore, Singapore

Xiaoxin Zou