Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Xiaowei Xu

Liangjian Li

Libin Liu

Wenqing Xu

Xiaolong Li

Lei Shi

Lujiang Huangfu

Chunping Long

Yueping Zuo

Dong Li

Zheng Liu

Dan Wang

Hongwei Tian

Xiaoye Ma

Wei Lin

Xing Fan

Hui Guo

Yansong Li

Hui Tian

Duo Zhang

Yongxian Xie

Ling Liu

Zunqing Song

Kaihong Ma

Yinghai Ma

Zhiwei Ding

Huanhuan Huang

Zisong Jiang

Jinyin Zuo

Huizhen Du

Jiale Li

Disclosed are a display substrate, a display panel and a display device. The display substrate includes: a base substrate, multiple gate-line groups, multiple data lines, the multiple data line include: first type of data lines and second type of data lines alternately arranged along the first direction; multiple transistors, transistors in the same sub-transistor group are connected with the same gate line, transistors in adjacent sub-transistor groups are connected with different gate lines, and transistors of the same sub-transistor group are connected with different data lines; multiple pins, the multiple pins include: first type of pins and second type of pins alternately arranged along the first direction; two adjacent first type of data lines are connected with a same first type of pin, and adjacent second type of data lines are connected with a same second type of pin.

Display substrate, display panel and display device

An OLED display substrate, a manufacturing method thereof and a display device are provided. The OLED display substrate includes a TFT array layer, a first electrode, a pixel definition layer, an OEL layer and a second electrode arranged on a base substrate. The pixel definition layer is configured to define a plurality of subpixel regions. A reflection structure surrounds each subpixel region and is capable of reflecting light beams from the OEL layer and beyond an escaping cone in such a manner as to enable at least parts of the light beams to enter the escaping cone.

Organic light-emitting diode display substrate, manufacturing method thereof and display device

The present application discloses a display panel comprising a substrate, a transistor layer on the substrate, and a pixel-defining layer on a side of the transistor layer distal to the substrate to divide the display panel into a plurality of subpixel regions. At least one subpixel region includes a display sub-region and a light-sensitive sub-region. The display panel further includes a plurality of organic light-emitting diodes formed on the transistor layer respectively on the plurality of subpixel regions. Additionally, the display panel includes a plurality of pixel circuits formed in the transistor layer respectively on the plurality of subpixel regions. Each pixel circuit includes at least a display-driving sub-circuit coupled to one organic light-emitting diode. At least one pixel circuit in the at least one subpixel region includes a light-sensing sub-circuit formed on the light-sensitive sub-region and coupled to the display-driving sub-circuit formed on the display sub-region.

AMOLED display panel having image scanning function

An electrical tool including: a cutter bit assembly, a driving mechanism for providing a power to the cutter bit assembly, and a flexible transmission mechanism, which is connected at one end thereof to the driving mechanism and connected at the other end thereof to the cutter bit assembly; the flexible transmission mechanism is twistable and bendable, and is configured to transmit the power provided by the driving mechanism to the cutter bit assembly.

Electrical tools

A display substrate, a method for manufacturing the same, a display panel and a display device are disclosed. The display substrate includes a pixel unit, and the pixel unit includes a light emitting layer and a pixel definition layer surrounding the light emitting layer. The pixel definition layer includes a first region and a second region. The first region has a first thickness, the second region has a second thickness. The first thickness is greater than the second thickness.

Display substrate and method for manufacturing the same, and display device

In accordance with various embodiments of the disclosed subject matter, a transparent display panel and a related display device are provided. In some embodiments, a transparent display panel is provided, the transparent display panel comprises: a first region and a second region, wherein the first region comprises a plurality of first display units, the second region comprises a plurality of second display units, a transmission rate of the one of the plurality of first display units is higher than a transmission rate of the one of the plurality of second display units, and a luminance rate of the one of the plurality of first display units is lower than a luminance rate of the one of the plurality of second display units.

Transparent display panel and display device

The present disclosure provides a Low Temperature Poly Silicon (LTPS) backboard, a method for manufacturing the LTPS, and a light-emitting device. The LTPS backboard includes: a base substrate, and a thin film transistor (TFT) and a light blocking layer that are arranged above the base substrate, wherein the light blocking layer is arranged above the TFT, and the light blocking layer is configured for preventing an irradiation light from irradiating onto the TFT.

Low temperature poly silicon backboard, method for manufacturing the same and light-emitting device

An organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity is disclosed. The organic light emitting display panel includes a pixel defining layer, which is provided with a plurality of light emitting material filling areas, a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The display effect of the organic light emitting display device is thereby improved.

Organic light emitting display panel and manufacturing method thereof, display device

The present disclosure provides a method for manufacturing a thin film transistor comprising, forming a pattern of an active layer on a substrate through a patterning process; performing ion doping to a channel region of the active layer; forming a gate insulating layer; forming a pattern of a gate through the patterning process; performing ion doping to a source contact region and a drain contact region of the active layer; forming an interlayer insulating layer; and performing laser annealing to the active layer, so as to make the active layer crystallize and the ions doped in the channel region, the source contact region and the drain contact region of the active layer activate simultaneously. In this method, the crystallization of the active layer and the activation of the ions doped in the active layer are implemented in the same process, which reduces the process cost and improves the efficiency.

Method for manufacturing thin film transistor

The present disclosure discloses a laser pulse delay system and a laser annealing system. The laser pulse delay system comprises: a beam splitter, a first reflective unit and a delay unit. The beam splitter is configured to split a laser beam emitted by a laser into a first beam and a second beam, such that the first beam is transmitted to the first reflective unit and the second beam is transmitted to the delay unit. The first reflective unit is configured to reflect the first beam it receives, such that the reflected first beam is transmitted to a component to be irradiated. The delay unit is configured to delay the second beam it receives, such that the delayed second beam is transmitted to the component to be irradiated.

Laser pulse delay system and laser annealing system

An organic light emitting device and a display apparatus are disclosed. The organic light emitting device includes an array substrate and a package substrate (); on a side of the package substrate () facing the array substrate, there is provided a protrusion () formed of a first transparent material, a surface of the protrusion () is also covered with a transparent layer () formed of a second transparent material, and the refractive index of the second transparent material is larger than the refractive index of the first transparent material. With the organic light emitting device, a part of light that is emitted from an organic light-emitting layer () and irradiated to a surface of the protrusion () is totally reflected and changed in optical paths to decrease incident light totally reflected at a boundary between the package substrate () and the outside air, and light that has been changed in optical paths is irradiated out through the package substrate () more easily, thereby improving the output efficiency of light.

Organic light emitting device having protrusion formed of transparent material and display apparatus

The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.

Preparation methods of low temperature poly-silicon thin film and transistor and laser crystallization apparatus

The present invention discloses an organic light emitting display panel and manufacturing method thereof and a display device, which can reduce the critical dimension bias of the pixel defining layer and improve the display uniformity. The organic light emitting display panel provide by the present invention comprises: a pixel defining layer, which is provided with a plurality of light emitting material filling areas, being characterized by further comprising: a metal layer provided on the pixel defining layer; the metal layer is provided with openings corresponding to the light emitting material filling areas respectively. The solutions provided by the present invention are used to improve the display effect of the organic light emitting display device.

A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

Conductive structure and manufacturing method thereof, array substrate, display device

The present disclosure discloses an OLED display substrate and a manufacturing method thereof, and a display apparatus. The OLED display substrate is a top emitting OLED display substrate, and comprises a reflective layer covering side surfaces of a pixel defining layer, thus the reflective layer and a first electrode of the OLED form a reflective cup which increases the reflection of light emitted from the OLED.

Growing community of inventors

Beijing, China

Xiaowei Xu