Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Nec (china) Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Baidu Online Network Technology (beijing) Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Peking University

Beijing Founder Electronics Co., Ltd.

Xiaowei Liu

Zongjie Guo

Yao Liu

Huibin Guo

Liangliang Li

Shoukun Wang

Xi Chen

Xiangqian Ding

Jinchao Bai

Yuchun Feng

Weisong Hu

Yang Wang

Yabo Wang

Bo Liu

Zheng Liu

Jun Li

Zhenfei Cai

Tao Wu

Meng Liu

Man Li

Hongwei Qi

Yuguang Liu

Daolong Wang

Yufei Yan

Yabin An

Huifeng Liu

Yang Yu

Bo Zhou

Jianfeng Yuan

Hongjiang Wu

Tsungchieh Kuo

Zhonghao Huang

Tao Luo

Chen Song

Yi Yuan

Jiamin Liao

Fan Chen

Zhenhua Li

Xiaming Zhu

Toshikazu Fukushima

Qiangze Feng

Chao Fan

Chenglong Wu

Yinyin Jin

Wenyu Lv

Jia Rao

Haiguang Li

Shijian Luo

Fanqing Meng

Zhiyong Fan

Huaming Li

Weili Zhang

Chenghai Li

Shaoya Wang

Junjian He

Heyuan Qiu

A muffling device includes an acquisition circuit, configured to obtain reference sound wave information of a user. The muffling device includes a modulation circuit, configured to analyze an acoustic wave characteristic of the reference sound wave information to obtain a characteristic parameter of the reference sound wave information. The muffling device includes a muffling circuit, configured to generate compensated sound wave information according to the characteristic parameter of the reference sound wave information. The muffling device includes a correction circuit, configured to compare muffed sound wave information superimposed by the compensated sound wave information and the reference sound wave information with the reference sound wave information, and feed back a comparison result to the muffling circuit. The muffling circuit can adjust the compensated sound wave information according to a fed back comparison result. The muffling device includes an output circuit, configured to output adjusted compensated sound wave information.

Device and method for muffling, communication device and wearable device

The present disclosure provides a thin film transistor and a fabrication method thereof, and an array substrate. The thin film transistor formed on a base substrate, the thin film transistor includes: an active layer; a first signal metal layer, provided on a surface of the active layer facing the base substrate; a second signal metal layer, provided on a surface of the active layer facing away from the first signal metal layer, wherein, the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer.

Thin film transistor, fabrication method therefor, and array substrate

Embodiments of the present application provide an Oxide TFT, a manufacturing method thereof, an array substrate and a display device. The Oxide TFT includes a base substrate; a gate electrode, a gate insulating layer and an active layer which are located on the base substrate; a source electrode and a drain electrode, the active layer is at least partly covered with the source electrode and the drain electrode; and a channel protection layer located between the source electrode and the drain electrode, each of the source electrode and the drain electrode includes at least part of a first metallic layer and at least part of a second metallic layer, the first metallic and the second metallic layer are stacked one on another, the channel protection layer is of a metal oxide.

Oxide thin film transistor, manufacturing method thereof, array substrate and display device

The present disclosure provides in some embodiments an oxide TFT display substrate, a manufacture method thereof and a display device. The oxide TFT display substrate includes a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region. The method includes steps of: forming, after the formation of the oxide TFT, a SiON layer at least covering the first region; and forming a SiNx layer covering the second region.

Oxide thin film transistor display substrate, manufacturing method thereof, and display device

The present disclosure relates to an array substrate, a method of manufacturing the same and a display device. The array substrate comprises a gate line PAD region and a data line PAD region. In the gate line PAD region of the array substrate, gate-line wirings, which are parallel to the gate lines and are electrically insulated from the gate lines, are provided between adjacent gate lines. In the data line PAD region of the array substrate, data-line wirings, which are parallel to the data lines and are electrically insulated from the data lines, are provided between adjacent data lines. Both of the gate-line wirings and the data-line wirings are conductive wiring segments. By forming the gate-line wirings and the data-line wirings in the PAD region, the ability of resisting scratch of the product can be improved while not deteriorating performance of display of the product.

Array substrate, method of manufacturing the same, and display device

Disclosed is an array substrate including a base substrate and a gate metal layer, a semiconductor layer, a source-drain metal layer, and a pixel electrode layer that are formed on the base substrate. The gate metal layer includes gate lines, gate electrodes of thin film transistors, and a plurality of first sensing lines extending along a row direction. The semiconductor layer includes an active layer of the thin film transistors, and a plurality of first photosensitive elements and a plurality of second photosensitive elements that are insulated from each other. The source-drain metal layer includes data lines, source electrodes and drain electrodes of the thin film transistors, and a plurality of second sensing lines extending along a column direction. Also disclosed are a method of fabricating the array substrate, an optical touch screen and a display device.

Array substrate and fabrication method thereof, optical touch screen, and display device

A method and apparatus for dynamically implementing an application function is provided, wherein the method includes sending status information to a network device; obtaining a layout information function configuration file fed back from the network device; and creating a window body and a program control based on the layout information function configuration file and establishing a link between the program control and the application function. By creating, through a layout information function configuration file, a display window and a program control in a terminal device, the present invention creates a link between the program control and the application function, so as to achieve fast development, adaptation, and release of the application; besides, personalized adaptation for a specific resolution, launching of a new function, and problem fixing may be implemented without releasing a new-version application.

Method and apparatus for dynamically implementing application function

A detection device includes a chamber for vacuum coating, a capacitance measurement device and a baffle mechanism located in the chamber. The baffle mechanism is a closed structure encompassed by a number of baffle walls, wherein at least one baffle wall includes a fixed baffle plate and a moveable baffle plate. The moveable baffle plate is pivotable about the fixed baffle plate. The moveable baffle plate, after pivoting, may get parallel with an adjacent baffle wall. The adjacent baffle wall and the moveable baffle plate are respectively connected to the capacitance measurement device, and the capacitance measurement device is used to measure the capacitance between the adjacent baffle wall and the moveable baffle plate. The detection device may accurately detect the service life of the baffle mechanism and achieve precise management of the apparatus.

Detection system for detecting service life of baffle mechanism in a chamber for vacuum coating

The present invention provides a method and apparatus for providing information and a method and apparatus for providing a search result. The method for providing information comprises: acquiring a current hotspot event, and determining a first keyword corresponding to the current hotspot event; determining a second keyword matched with the first keyword in a pre-built first database, and determining an information provider suitable for hotspot correlation according to the second keyword, the first database comprising the information provider and the second keyword corresponding to the information provider; and generating hotspot information materials of the information provider suitable for hotspot correlation according to the first keyword, and making the hotspot information materials online so as to be provided for a user. The method for providing information in the embodiments of the present invention can meet user needs, can increase the information provision efficiency, and improve the information conversion rate.

Method and apparatus for providing information and method and apparatus for providing search result

The present invention discloses a method for manufacturing a thin-film transistor, comprising the steps of: forming a semiconductor active layer, and a doped semiconductor active layer; forming a source-drain metal layer; forming a channel region; and implanting ions for lowering the TFT leakage current into the surface of the semiconductor active layer in the channel region via ion implantation after forming the channel region. The invention further relates to a thin-film transistor, a TFT array substrate and a display device. The invention has the following beneficial effects: by implanting ions for lowering the TFT leakage current into the channel region, the electrical performance of a TFT may be improved, and the thickness of a semiconductor active layer in a channel region may be changed controllably.

Method for manufacturing thin-film transistor by implanting ions into channel region for lowering leakage current

An embodiment of the present invention discloses a 3D barrier substrate and a method for manufacturing the same, and a display device in order to improve the utilization of facilities, increase the production efficiency, and decrease the cost of production. The method of manufacturing 3D barrier substrate comprises: forming a transparent electrode thin film on a substrate, and forming a passivation layer on the transparent electrode thin film; forming an transparent electrode and a passivation layer via hole by a patterning process, wherein the via hole is used for coupling the transparent electrode to the signal line; and forming a signal line, wherein the signal line is coupled to the transparent electrode through the via hole.

Method of manufacturing 3D barrier substrate

A thin film transistor and manufacturing method thereof, an array substrate comprising the thin film transistor and manufacturing method thereof are provided. The method of manufacturing the thin film transistor comprises forming an active layer and a source-drain electrode layer, forming a photoresist layer on the source-drain electrode layer and forming a pattern of the photoresist layer by a pattern process; etching the source-drain electrode layer by using the pattern of the photoresist layer as a mask to form a pattern of the source-drain electrode layer including a source electrode and a drain electrode; and removing the photoresist, then etching the active layer by using the pattern of the source-drain electrode layer as a mask to form a pattern of the active layer.

Manufacturing method of thin film transistor and manufacturing method of array substrate

Provided is a manufacturing method of an array substrate with an etching stop layer. The method includes: forming a pattern including a gate, a gate line and a common electrode line on a substrate through a first patterning process; forming a gate insulation layer, an active layer film and an etching stop layer through a second patterning process; wherein, the etching stop layer corresponds to a gap between a source and a drain which are to be formed, and a via hole exposing the common electrode line is formed above the common electrode line; forming at least an active layer, a pattern including source, drain and data line and a protection layer through a third patterning process; wherein, the protection layer exposes a part of the drain; and forming at least a pixel electrode through a fourth patterning process; wherein, the pixel electrode is electrically connected with the drain.

Manufacturing method of an array substrate

An array substrate including a base substrate is disclosed; the base substrate is divided into a pixel region and a peripheral circuit region, the pixel region sequentially includes a gate electrode, a gate insulation layer, a semiconductor active layer, a pixel electrode, a source/drain electrode, a passivation layer and a common electrode; the peripheral circuit region sequentially includes a first circuit line, the gate insulation layer, a second circuit line and the passivation layer. An orthogonal projection area of the second circuit line is at least partly overlapped with an orthogonal projection area of the first circuit line on the base substrate, and the second circuit line is directly electrically connected with the first circuit line through a via hole penetrating the gate insulation layer. A method for manufacturing the array substrate and a display device including the array substrate are also disclosed.

Array substrate and manufacturing method thereof, and display device

Growing community of inventors

Beijing, China

Xiaowei Liu