Applied Materials, Inc.

Xiaowei Li

Zhiyuan Ye

Arkadii V Samoilov

Yihwan Kim

Ali Zojaji

Nicholas C Dalida

Jinsong Tang

Xiao Chen

David K Carlson

Satheesh Kuppurao

Brian Hayes Burrows

Kailash Kiran Patalay

Howard Beckford

Herman Diniz

Errol Antonio Sanchez

Jeffrey Ronald Campbell

Zouming Zhu

A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems

In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Use of CL2 and/or HCL during silicon epitaxial film formation

A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

Use of Cl2 and/or HCl during silicon epitaxial film formation

In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.

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Sunnyvale, CA, United States of America

Xiaowei Li