Ningbo Crrc Times Transducer Technology Co., Ltd.

Xiaowei Hou

Liangguang Zheng

Juping Li

Po Zhang

Junjie Guo

Yang Lv

Peng Wu

Fei Wang

Huaxiong Zheng

Dacheng Ni

Shengping Zhu

Tao Jiang

Zhujian Chen

Fangliang Zhu

Hang Zhao

A manufacturing method for a fluxgate chip, comprising: firstly, selecting two high-resistance silicon wafers, electroplating a ferromagnetic core on the surface of one of the two high-resistance silicon wafers, and providing a ferromagnetic core cavity on the surface of the other high-resistance silicon wafer; then, bonding the two high-resistance silicon wafers up and down; next, respectively providing coil grooves, through grooves and electrode windows on the surfaces of opposite sides of the two high-resistance silicon wafers to form a silicon wafer mold; and finally, filling the surface of the silicon wafer mold with alloy. By means of electroplating, post-bonding and final etching, on the one hand, the formed fluxgate chip has both small thickness and sufficient strength, on the other hand, large-scale batch production of the fluxgate chip can be achieved, the working efficiency is improved, and the production cost is reduced.

Manufacturing method for fluxgate chip

A chip type coil-based fluxgate current sensor, comprising: a magnetism gathering iron core, a chip type coil, an integral filtering module, a signal driving module, a voltage acquisition module, and a signal amplification module which are connected in sequence. The chip type coil comprises a first high-resistance silicon wafer and a second high-resistance silicon wafer which are bonded with each other; a built-in cavity is formed between involution surfaces of first high-resistance silicon wafer and second high-resistance silicon wafer, and multiple solenoid cavities filled with coil materials are provided around the periphery of the cavity; a cavity opening is formed at one end after involution of first high-resistance silicon wafer and second high-resistance silicon wafer. The magnetism gathering iron core is inserted into the cavity of the chip type coil by means of the cavity opening. The present current sensor is small in size and stable in signal.

Chip type coil-based fluxgate current sensor

A measurement circuit of thin-film temperature sensor comprises: out-phase input end and output end of first operational amplifier are connected to first end of thin-film resistor; first end of first resistor is connected to output end of first operational amplifier, second end of first resistor is connected to in-phase input end of first operational amplifier; second end of first resistor is grounded via second resistor; output end of second operational amplifier is connected to first end of potentiometer; second end of the potentiometer is connected to the constant current source and in-phase input end of second operational amplifier respectively; first end of third resistor is connected to output end of second operational amplifier, second end of third resistor is connected to out-phase input end of second operational amplifier; second end of third resistor is grounded via fourth resistor; voltage value of second end of potentiometer is output signal.

Measurement circuit of thin-film temperature sensor

A micro-fluxgate sensor has a double-iron core assembly, a self-oscillating module, a current superimposing and amplifying module and a voltage acquisition module. The double-iron core assembly comprises a first iron core and a second iron core. The first iron core is provided with a first winding coil. The second iron core is provided with a second winding coil. The first winding coil and the second winding coil are respectively connected with an input end of the self-oscillating module, and an output end of the self-oscillating module is respectively connected with the current superimposing and amplifying module and the voltage acquisition module. The fluxgate sensor is simple in processing circuit without manual debugging and is easily integrated.

Micro-fluxgate sensor

A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.

Semiconductor silicon-germanium thin film preparation method

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Zhejiang, China

Xiaowei Hou