Chinese Academy of Sciences

Xiaoshuang Chen

Wei Lu

Fang Wang

Weida Hu

Peng Wang

Bo Zhang

Zhen Wang

Yu Yu

Ning Li

Zhifeng Li

Jing Zhou

Yunfeng Chen

Shaowei Wang

Zeshi Chu

Qingyuan Cai

Fangzhe Li

Pingping Chen

Zhaoyu Ji

Ting He

Fang Zhong

Jinshui Miao

Jie Deng

Runzhang Xie

Shangkun Guo

Fuxing Dai

Mengke Lan

Xu Dai

The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

Infrared photodetector based on van der waals heterostructure and preparation method thereof

The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a BiOSe layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the BiOSe layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the BiOSe layer, and separately fabricating the metal source and the metal drain on the BiOSe layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.

Momentum-matching and band-alignment van der waals (vdW) infrared photodetector and fabrication method thereof

The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Integrated infrared circular polarization detector with high extinction ratio and design method thereof

Taught herein is an integragted narrow bandpass filter array and a method of its fabrication. The filter array is a Fabry-Perot type of filter array, wherein the pass band changes with the thickness of the spacer layer. The integrated filter array comprises a substrate, a lower mirror stack, a spacer array, and an upper mirror stack. The spacer array is an array of varied thicknesses formed using a combinatorial deposition technique. The spacer array is used to control the pass band of each mini-size narrow bandpass filter and realizes the integration of narrow bandpass filters with different pass bands on a single substrate. The merit of this technique lies in its fabrication efficiency and finished product rate which are much higher than for conventional methods. The filter array is completely matched with detector arrays and functional in most of the important optical ranges.

Integrated narrow bandpass filter array and a method for fabrication thereof

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Shanghai, China

Xiaoshuang Chen