University of California

The University of Texas System

Georgia Tech Research Corporation

University of Nebraska

Indiana University

Xiaoshan Xu

Andrew Marshall

Peter A Dowben

Azad Naeemi

Thilini K Ekanayaka

Xuanyuan Jiang

Alpha T N'Diaye

Aaron Mosey

Guanhua Hao

Ruihua Cheng

Andrew J Yost

A thin film molecular memory is provided that satisfies criteria needed to make a molecular spintronic device, based on spin crossover complexes, competitive with silicon technology. These criteria include, device implementation, a low coercive voltage (less than 1V) and low write peak currents (on the order of 10A/cm), a device on/off ratio >10, thin film quality, the ability to 'lock' the spin state (providing nonvolatility), the ability to isothermally “unlock” and switch the spin state with voltage, conductance change with spin state, room temperature and above room temperature operation, an on-state device resistivity less than 1 Ω·cm, a device fast switching speed (less than 100 ps), device endurance (on the order of 10switches without degradation), and the ability of having a device with a transistor channel width of 10 nm or below.

Thin film molecular memory

Growing community of inventors

Lincoln, NE, United States of America

Xiaoshan Xu