Alpha and Omega Semiconductor International LP

Xiaorong Ge

Junho Lee

Zhiqiang Niu

Bum-Seok Suh

Jong-Mu Lee

Jia-long Yuan

Jun Lu

Power semiconductor module

A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. For the case including two control ICs, a low voltage IC controls a first transistor, a second transistor, and a third transistor and the high voltage IC controls a fourth transistor, a fifth transistor, and a sixth transistor.

Semiconductor power module package having lead frame anchored bars

An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a fourth slanted section, a fifth slanted section, and a molding encapsulation. A respective bottom surface of each of the first, second, third, and fourth transistor die supporting elements are exposed from the molding encapsulation.

Intelligent power module containing exposed surfaces of transistor die supporting elements

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Pleasanton, CA, United States of America

Xiaorong Ge