Xiamen Tianma Micro-electronics Co., Ltd.

Xiaoqi Shi

Guozhao Chen

Bozhi Liu

Shoujin Cai

Xuexin Lan

Zhipeng Huang

A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.

Diode and fabrication method thereof, array substrate and display panel

A display apparatus and a method for fabricating a display apparatus are provided. The display apparatus includes a backlight module and a display panel opposite to the backlight module. The display panel includes an array substrate and a color film substrate opposite to the array substrate. The array substrate is disposed on a side of the color film substrate away from the backlight module. The color film substrate includes a black matrix. The array substrate includes a plurality of fingerprint identification components; and an orthographic projection of the plurality of fingerprint identification components on the backlight module is within an orthographic projection of the black matrix on the backlight module.

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Xiamen, China

Xiaoqi Shi