Applied Materials, Inc.

Xiaopu Li

Kallol Bera

Philip Allan Kraus

Yaoling Pan

Kelvin Chan

Tsutomu Tanaka

Dmitry A Dzilno

Jozef Kudela

Kenric T Choi

Amir Bayati

William John Durand

Jun Ma

Jennifer Y Sun

John C Forster

Mark Joseph Saly

Deenesh Padhi

Anantha K Subramani

Amit Kumar Bansal

Michael D Willwerth

Satoru Kobayashi

Edward P Hammond

Leonard Michael Tedeschi

Jonghoon Baek

Hang Yu

Mayur G Kulkarni

Patrick John Tae

Daemian Raj Benjamin Raj

Alexander Viktorovich Garachtchenko

Daniel Thomas McCormick

Madhu Santosh Kumar Mutyala

Lisa J Enman

Michelle SanPedro

Akshay Dhanakshirur

Albert Barrett Hicks, Iii

Saketh Pemmasani

Avinash Ishwar Shervegar

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.

Shaped showerhead for edge plasma modulation

Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

Capacitive sensor for monitoring gas concentration

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating a plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool

Embodiments disclosed herein include a sensor. In an embodiment, the sensor comprises a board, wherein an aperture is formed through the board, a current loop winding through the board around the aperture, and a voltage ring around the aperture and within an inner perimeter of the current loop, wherein the voltage ring comprises an interior ring, an insulator ring around the interior ring, and an exterior ring around the insulator ring.

RF measurement from a transmission line sensor

Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

Device and method for tuning plasma distribution using phase control

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

Capacitive sensor for chamber condition monitoring

Growing community of inventors

San Jose, CA, United States of America

Xiaopu Li