Applied Materials, Inc.

Xiaoping Zhou

Douglas A Buchberger, Jr

Andrew Nguyen

Hamid Tavassoli

Kallol Bera

Xing Lin

Surajit Kumar

Shane C Nevil

Anchel Sheyner

Hamid Noorbakhsh

Douglas Buchberger

Jeffrey William Dietz

Shahid Rauf

Walter R Merry

Brad L Mays

Fernando Silveira

Chetan Mahadeswaraswamy

Duy D Nguyen

Yashaswini Pattar

Tina Tsong

John Patrick Holland

Daniel John Hoffman

James D Carducci

Valentin Nikolov Todorow

Paul Brillhart

Alexander Miller Paterson

Matthew L Miller

Subhash Deshmukh

Sharma V Pamarthy

Jim Zhongyi He

Jivko Dinev

Dennis Koosau

Farid Abooameri

Robert Scott Clark

Huutri Dao

Kelly A McDonough

David E Gutierrez

Declan Scanlan

Embodiments of a showerhead for use in a substrate processing chamber are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes an upper plate having an outer gas inlet fluidly coupled to an outer recursive gas path and an inner gas inlet fluidly coupled to an inner recursive gas path; and a lower plate having an upper surface bonded to the upper plate and a lower surface having a plurality of outer gas distribution holes and a plurality of inner gas distribution holes, wherein the upper surface includes an outer recess to define an outer annular gas plenum fluidly coupled to the outer gas inlet and to the plurality of outer gas distribution holes and an inner recess to define one or more inner annular gas plenums fluidly coupled to the inner gas inlet and to the plurality of inner gas distribution holes.

High power showerhead with recursive gas flow distribution

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.

Extended detachable gas distribution plate and showerhead incorporating same

Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Substrate support with symmetrical feed structure

Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

Apparatus for controlling temperature uniformity of a substrate

Showerhead having an extended detachable gas distribution plate

Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

Apparatus for etching high aspect ratio features

Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.

Apparatus for controlling the temperature uniformity of a substrate

An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of inner fluid conduits disposed beneath an inner portion of the top surface, and a plurality of outer fluid conduits disposed beneath an outer portion of the top surface. A chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits. A chuck assembly includes a fluid distribution plate disposed below the cooling channel base and the base plate to distribute a heat transfer fluid delivered from a common input to each inner or outer fluid conduit. The branches of the inner input manifold may have substantially equal fluid conductance.

Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity

Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow

Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Methods and apparatus for controlling substrate temperature in a process chamber

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San Jose, CA, United States of America

Xiaoping Zhou