First Solar, Inc.

Xiaoping Li

Gang Xiong

Sachit Grover

Roger Malik

Dingyuan Lu

Wei Zhang

Chungho Lee

Joseph John Shiang

William Hullinger Huber

Hongbo Cao

Hongying Peng

Qianqian Xin

Shahram Seyedmohammadi

Le Chen

Rick C Powell

Zhibo Zhao

Sergei Kniajanski

Feng Liao

Aravamuthan Varadarajan

Vera Steinmann

Jason Kephart

Stuart Irvine

David Ho

Tze-Bin Song

Dirk Weiss

Rajni Mallick

Wenming Wang

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10cm. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same

According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks

According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

Buffer layers for photovoltaic devices with group V doping

Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Methods for perovskite device processing by vapor transport deposition

Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

Doped photovoltaic semiconductor layers and methods of making

A photovoltaic device () can include an absorber layer (). The absorber layer () can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4&#xd7;10cm. The absorber layer () can include oxygen in a central region of the absorber layer (). The absorber layer () can include an alkali metal in the central region of the absorber layer (). Methods for carrier activation can include exposing an absorber layer () to an annealing compound in a reducing environment (). The annealing compound () can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same

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Perrysburg, OH, United States of America

Xiaoping Li