Zhuzhou Crrc Times Electric Co., Ltd

Zhuzhou Crrc Times Semiconductor Co. Ltd.

Xiaoping Dai

Guoyou Liu

Haihui Luo

Yafei Wang

Chengzhan Li

Jianwei Huang

Rongzhen Qin

Yangang Wang

A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region () located above a first conductivity type substrate (). A main trench is provided in the surface of the first conductivity type drift region (); a Schottky metal () is provided on the bottom and sidewalls of the main trench; a second conductivity type well region () is provided in the surface of the first conductivity type drift region () and around the main trench; a source region () is provided in the surface of the well region (); a source metal () is provided above the source region (); a gate insulating layer () and a gate () split into two parts are provided above the sides of the source region (), the well region (), and the first conductivity type drift region () close to the main trench.

Silicon carbide MOSFET device and cell structure thereof

Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an auxiliary gate layer and the corresponding gate oxide layer, is arranged below an emitting metal electrode between a first common groove and a second common groove so as to provide a carrier pathway when the insulated gate bipolar transistor is turned off, so that not only the turn-off speed of the insulated gate bipolar transistor is increased, but also the reverse-biased safety operation area characteristic of the insulated gate bipolar transistor is improved, thus improving the performance of the insulated gate bipolar transistor.

Insulated gate bipolar transistor and preparation method therefor

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Hunan, China

Xiaoping Dai