Semiconductor Manufacturing International (Shanghai) Corporation

Lear Corporation

Tyco Electronics (Shanghai) Co., Ltd.

Xiaopeng Yu

Youfeng He

Zhengling Chen

Weidong Zhang

Shi Qing Qiu

Sean Fuxiong Zhang

An electric connector assembly includes a housing and an assist lever is attached to the housing for relative rotational movement. The electric connector assembly includes a latch that retains the assist lever in a final position relative to the housing. The electric connector assembly also includes a connector position assurance that is attached to the housing for relative movement between a pre-lock position and a lock position. When the connector position assurance is in the lock position, it extends into a notch in the assist lever and prevents rotation of the assist lever relative to the housing.

Electric connector with connector position assurance

A method is provided for fabricating fin field-effect transistors. The method includes providing a substrate. The method also includes forming a plurality of fins on a surface of the substrate. Further the method includes forming a transitional layer having atoms identical to atoms of the fins on side and top surfaces of the plurality of fins by a deposition process. Further, the method also includes performing an oxidation process to convert the transitional layer and a surface portion of the fins into a dielectric material to form a gate dielectric layer on the plurality of fins.

Fin field-effect transistor

The present disclosure discloses a connection terminal and a connector. The connection terminal comprises a terminal body, a plug-in part, and a stop part. The plug-in part is disposed at an axial front end of the terminal body and extends along an axial direction of the terminal body to enable a plug-fit with a mating terminal. The stop part is disposed at an axial front end of the terminal body for stopping the connection terminal from a continued forward insertion when the connection terminal is mounted in place in a connector housing. The stop part extends along a radial direction of the terminal body and is arranged to be stop-fittable with a rear end of the plug-in part along the axial direction of the terminal body. The connection terminal according to the present disclosure has a simplified structure with good processability and high mechanical strength.

Connection terminal and connector

Fin field-effect transistor and fabrication method thereof

Method and system for forming gate structure with controllable oxide. The method includes a step for providing a semiconductor substrate and defining a source region and a drain region within the semiconductor substrate. Furthermore, the method includes a step for defining a gate region positioned between the source region and the drain region. Moreover, the method provides a step for forming a first layer overlaying the gate region. The first layer includes silicon nitride and/or silicon oxynitride material. Also, the method includes a step for forming a second layer by subjecting the semiconductor substrate to at least oxygen at a predetermined temperature range for a period of time. The second layer has a thickness less than 20 Angstroms.

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Shanghai, China

Xiaopeng Yu