Alliance for Sustainable Energy, LLC

Xiaonan Li

Timothy A Gessert

Robert Torres, Jr

Carrie L Wyse

Teresa M Barnes

Timothy J Coutts

Yanfa Yan

Tim Gessert

Clay M Dehart

A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1&#xd7;10cmand 2&#xd7;10cm. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cmVsand 60 cmVs. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

Amorphous tin-cadmium oxide films and the production thereof

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Fluorine compounds for doping conductive oxide thin films

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.

Method for producing high carrier concentration p-Type transparent conducting oxides

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Evergreen, CO, United States of America

Xiaonan Li