Globalfoundries U.S. Inc.

Globalfoundries Inc.

Xiaoming Yang

Haiting Wang

Jeffrey Chee

Hong Yu

Sipeng Gu

Keith Howard Tabakman

Chun Yu Wong

Liu Jiang

Guoliang Zhu

Yong Jun Shi

Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.

Multiple patterning with self-alignment provided by spacers

A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.

Air gap regions of a semiconductor device

A method, FET structure and gate cut structure are disclosed. The method forms a gate cut opening in a dummy gate in a gate material layer, the gate cut opening extending into a space separating a semiconductor structures on a substrate under the gate material layer. A source/drain region is formed on the semiconductor structure(s), and a gate cut isolation is formed in the gate cut opening. The gate cut isolation may include an oxide body. During forming of a contact, a mask has a portion covering an upper end of the gate cut isolation to protect it. The gate cut structure includes a gate cut isolation including a nitride liner contacting the end of the first metal gate conductor and the end of the second metal gate conductor, and an oxide body inside the nitride liner.

Gate cut first isolation formation with contact forming process mask protection

Growing community of inventors

Ballston Lake, NY, United States of America

Xiaoming Yang