Qualcomm Mems Technologies, Inc.

Xiaoming Yan

Evgeni Petrovich Gousev

James Randolph Webster

Wonsuk Chung

Thanh Nghia Tu

Ion Bita

Ming-Hau Tung

Teruo Sasagawa

Philip Don Floyd

Brian W Arbuckle

Ana Rangelova Londergan

Chok Ho

Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices

The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Etching processes used in MEMS production

A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.

Selective etching of MEMS using gaseous halides and reactive co-etchants

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Sunnyvale, CA, United States of America

Xiaoming Yan