Motorola Corporation

Freescale Semiconductor,inc.

Xiaoming Hu

Ravindranath Droopad

Yi Wei

Zhiyi Jimmy Yu

Yong Liang

John L Edwards, Jr

James Bradley Craigo

Jun J Wang

Alexander A Demkov

Dirk C Jordan

High quality epitaxial layers of monocrystalline oxide materials () can be grown overlying monocrystalline substrates () such as large silicon wafers. The monocrystalline oxide layer () comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer () of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.

Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process

A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide ( ) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material ( ). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material ( ).

Method of removing silicon oxide from a surface of a substrate

A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.

Method of removing an amorphous oxide from a monocrystalline surface

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Chandler, AZ, United States of America

Xiaoming Hu