Taiwan Semiconductor Manufacturing Comp. Ltd.

Xiaomeng Chen

Chia-Shiung Tsai

Ping-Yin Liu

Yuan-Chih Hsieh

Hsun-Chung Kuang

Lan-Lin Chao

Xin-Hua Huang

Hung-Hua Lin

Pei-Hsuan Lee

Yu-Hsiang Cheng

Kuang-Shing Chen

Hung-Ming Chen

A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Integrate rinse module in hybrid bonding platform

A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Semiconductor structure inspection using a high atomic number material

Growing community of inventors

Baoshan, China

Xiaomeng Chen