Shenzhen China Star Optoelectronics Technology Co., Ltd.

Huawei Technologies Co., Limited

Shenzhen China Star Optoelectronics Co., Ltd

Xiaolong Ma

Yungjui Lee

Chao Ma

Song Lan

Ji Li

Riqing Zhang

Stephane Badel

Xinhui Zhong

Xingwu Chen

Yanan Wang

Kuancheng Lee

Tao Hu

Hongquan Wei

Hsiao Hsien Chen

Tsunglung Chang

Kuan-Cheng Lee

Yanxiang Liu

Yu Xia

Yongjie Zhou

Hong-Ji Huang

Hongji Huang

Hungjui Chen

Yung Jui Lee

Sunhom Steve Paak

Daxiang Wang

Zanfeng Chen

Huabin Chen

Xiufen Zhu

This application provides an integrated circuit device and a preparation method thereof, and relates to the field of semiconductor technologies. An isolation section for suppressing a leakage current path of two adjacent transistors may be formed by using a simple process. The integrated circuit device includes a substrate and a fin protruding from the substrate. The integrated circuit device further includes two adjacent transistors. The two adjacent transistors use two spaced segments on the fin as respective channels of the two adjacent transistors. A part that is of the fin and that is located between the two spaced segments is processed to obtain an isolation section. The isolation section is used to suppress current transfer between the two channels of the two adjacent transistors.

Integrated circuit device and preparation method thereof

An embodiment of the invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove; and forming a source and a drain in a preset source drain area along the gate length direction.

Field-effect transistor and fabrication method of field-effect transistor

The invention provides a fabrication method of a field-effect transistor. The method includes: forming a support structure with a superlattice feature on a semiconductor substrate, where the support structure includes a first semiconductor material layer and a second semiconductor material layer that are alternately disposed, and an isolation layer is disposed on two sides of the support structure; forming, along a boundary between the isolation layer and the support structure, a dummy gate structure that covers the support structure, where a length of the dummy gate structure in a gate length direction is less than the first semiconductor material layer; removing, along the gate length direction, an area other than a sacrificial layer in the first semiconductor material layer to form an insulation groove,; and forming a source and a drain in a preset source drain area along the gate length direction.

A liquid crystal material for a liquid crystal display panel is used to form a polymer film on a substrate on which no PI layer is provided so as to realize normal display of the liquid crystal panel. Meanwhile, realiability of the panel can be improved, a voltage holding rate can be improved, and poor alignment of the self-alignment liquid crystal material, afterimage, and other problems can be solved.

Liquid crystal material, liquid crystal display panel, and method for manufacturing the liquid crystal display panel

Provided are a liquid crystal display device and a manufacture method thereof. The liquid crystal display device is a blue phase liquid crystal display device. The alignment layer is not required. The liquid crystal composition forming the liquid crystal layer comprises liquid crystal material, quantum dots material mixed in the liquid crystal material, polymeric monomer and chiral material; the polymeric monomer is polymerized to form a polymer network under a blue phase temperature range as forming the liquid crystal layer, which can stabilize the blue phase liquid crystal, and thus to expand the blue phase temperature range. The grain size of the quantum dots material in the liquid crystal composition is in the nano scale, which can expand the blue phase liquid crystal temperature range. Namely, the blue phase temperature range of the liquid crystal material has already been expanded before the polymeric monomer is polymerized.

Liquid crystal display device and manufacture method thereof

The invention provides a PDLC display panel, manufacturing method thereof, and an LCD. The PDLC display panel comprises a PDLC layer, which comprising a plurality of red sub-pixel portions, green sub-pixel portions, and blue sub-pixel portions. The red, green and blue sub-pixel portion is a PDLC film having red, green and blue dye, respectively. The light passing through the red, green, and blue sub-pixel portions of the PDLC layer displays red, green and blue colors respectively. The PDLC display panel is simple in structure, on the premise to achieve color display, eliminating the upper and lower polarizers, polyimide (PI) alignment layer, CF layer and the black matrix, to achieve high light penetration rate and low manufacturing costs, as well as high backlight utilization with the use of quantum dot layer in the CF substrate.

PDLC display panel, manufacturing method thereof, and LCD

In a provided vertical alignment method, a pixel region, and the pixel region is divided into four sub regions of equal sizes which each is designed to be a square, and a pattern unit on the mask comprises a photic region corresponding to one sub region and a shading region corresponding to the other three sub regions in shape and size. The mask is employed to implement linear UV light irradiation to one sub region according to a certain irradiation angle to obtain a alignment direction of the one sub region, and then, the position of the mask and the certain irradiation angle of the irradiation are maintained to be unchanged. By rotating the pixel region 90&#xb0; with three times, and the irradiation is implemented to the other three sub regions. Accordingly, the four sub regions have four alignment directions different from one another.

Vertical photo alignment method with maintaining position of mask unchanged and manufacture method of liquid crystal display panel utilizing the same

The present invention provides a method for manufacturing a PDLC display device and a PDLC display device. The method for manufacturing a PDLC display device according to the present invention provides a black matrix and a base plate that collectively delimit a plurality of pixel cavities and fills a mixture of PDLC and red QDs, a mixture of PDLC and green QDs, and PDLC respectively into the plurality of pixel cavities to form a PDLC substrate, which is laminated with an array substrate, and installed with a blue light backlight module, so as to form a PDLC display device. Light leakage and color mixture can be eliminated and processes related to alignment layers and polarizers can be saved to thereby increase the manufacturing efficiency and lower the manufacturing cost. The PDLC display device according the present invention is manufactured with the above-described method and demonstrates at least four displaying modes of red, green, blue, and indistinctness, allowing for use in applications where unique effects are required, and helping eliminate light leakage and color mixture and also requiring no alignment layer and polarizer so that the manufacturing efficiency is high and the manufacturing cost is low.

Method for manufacturing PDLC display device and PDLC display device

A liquid crystal display apparatus is provided. The liquid crystal display apparatus includes a graphene LED backlight source, a first polarizing film, a first substrate, a liquid crystal layer, a second substrate and a second polarizing film. The graphene LED backlight source is used for providing light output, the first polarizing film is used for converting the light output from the backlight source into a polarized light. The liquid crystal layer includes liquid crystal molecules used for deflecting the polarized light from the backlight source to form a polarized output light, and the second polarizing film is used for emitting the polarized output light.

Liquid crystal display apparatus

A design method for a curved display panel and a curved display device are is provided. The curved display panel comprises a curved thin film transistor array substrate, a liquid crystal layer, a curved color filter substrate, and a spacer assembly. The spacer assembly is used to maintain a predetermined distance between the curved thin film transistor array substrate and the curved color filter substrate. A display defect caused by an uneven cell thickness of the curved display panel is avoided.

Method for curved display panel

The invention provides a manufacturing method for VA type LCD panel. The manufacturing method of the present invention adds a photo-initiator and a polymeric monomer to LC material, and uses UV light to irradiate through a mask so that the polymeric monomer polymerizes in accordance with the mask pattern to form polymer protrusions on the array substrate side to achieve the effect similar to protrusion or slit. The method is applicable for the LC molecules to form the pre-tilt angle so that the LC molecules in the panel are lined up along the normal direction. The method is simple, eliminates ITO etching process on the array substrate side, and reduces costs.

Manufacturing method for VA type LCD panel

The present application provides a method of fabricating a COA type liquid crystal display panel and the COA type liquid crystal display panel, which utilizes reactive liquid crystal, reactive monomers, red quantum-rods and green quantum-rods to fabricate a color filter thin film. Due that light generated by the red and green quantum rods in the color filter thin film when they are excited are polarized light, and the red and green quantum rods therein are arranged along the same direction, the excited red and green quantum rods generate red and green linear polarized light conforming to the polarized direction so as to play a role of a lower polarizer and to allow the COA type liquid crystal display panel fabricated by the method not only obtain bright trichromatic light for increasing color saturation, but also omit the lower polarizer for reducing fabrication cost.

Methods of fabricating COA type liquid crystal display panels and COA type liquid crystal display panels

The present invention provides a liquid crystal display device. By mixing the quantum dots of different light emitting wavelengths in the liquid crystals to replace the color resist layer on the CF substrate, the liquid crystal display panel still can emit lights of RGB three colors in condition of without the color resist layer. Meanwhile, by mixing the dichroic dye with polarization function in the liquid crystals, the arrangement of one polarizer can be eliminated. In comparison with the traditional liquid crystal display panel, the liquid crystal display panel of the present invention eliminates the components, such as the color resist layer and the upper polarizer. The structure is simple, and the manufacture cost is low. Meanwhile, the color display quality of the liquid crystal display panel is great, and the light transmission ratio is high, which effectively promote the light use efficiency and the display performance of the liquid crystal display device.

Liquid crystal display comprising different mixed liquid crystal materials respectively located in a plurality of red, green, and blue strip grooves

The present invention provides a liquid crystal display panel structure and a manufacture method thereof. The liquid crystal display panel structure comprises a CF substrate (), a TFT substrate (), a liquid crystal layer filled between the CF substrate () and the TFT substrate (), sealant () coated between the CF substrate () and the TFT substrate () and a black matrix () arranged between the CF substrate () and the TFT substrate (); the black matrix () is positioned at periphery of an active area (AA) on the CF substrate (), and a height thereof is smaller than a distance between the CF substrate () and the TFT substrate (), and the black matrix () comprises a plurality of trenches (), and each of the trenches () penetrates the black matrix () to form a hollow construction, and the sealant () is positioned on the black matrix () and fills in the trenches (). Such structure is capable of promoting the adhesive force between the CF substrate and the TFT substrate and preventing separation of the CF substrate and the TFT substrate without any additional cost.

Liquid crystal display panel structure and manufacture method thereof

The present invention provides to an in-plane-switching (IPS) mode liquid crystal panel, which comprises: a first substrate, a second substrate, a coplanar transparent electrode layer and a liquid crystal layer. The first and second substrates have a first alignment film and a second alignment film, respectively. The coplanar transparent electrode layer is disposed onto the second alignment film. The liquid crystal layer is disposed in a space between the first alignment film of the first substrate and the coplanar transparent electrode layer of the second substrate. The liquid crystal layer comprises dual-frequency liquid crystal molecules and dual-frequency reactive mesogens/monomers. The liquid crystal panel of the present invention can overcome the problems of pollution and static electricity generated from the rubbing alignment in the in-plane-switching (IPS) mode, so as to simplify the manufacturing process and provide the advantages of high contrast, high response speed and wide viewing angle.

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Shenzhen, China

Xiaolong Ma