Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Hefei Boe Display Technology Co., Ltd.

Xiaolong He

Zhanfeng Cao

Qi Yao

Bin Zhang

Zhengliang Li

Jincheng Gao

Shi Shu

Xiangchun Kong

Wei Zhang

Feng Zhang

Wei Xu

Jikai Yao

Feng Guan

Zhifu Li

Xuefei Sun

Dongsheng Li

Chuanxiang Xu

Tingting Zhou

Zhiyuan Ji

Zhen Liu

Yanbing Wu

Jiushi Wang

Jianhua Du

Seong Yeol Yoo

Hong Wang

Guangcai Yuan

Rui Huang

Can Wang

Seongyeol Yoo

Yonglian Qi

Jing Feng

Wusheng Li

Shengguang Ban

Huili Wu

Shipei Li

Yingtao Wang

Fang He

Tian Ji Yang

Juan Chen

Yue Shi

Miki Kashima

Jianming Sun

Haijiao Qian

Yaohui Gu

Yu Cheng Chan

Dongcan Mi

A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

Thin film transistor and method for manufacturing the same, array substrate and electronic device

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a base substrate and a thin film transistor on the base substrate; a light shielding layer is disposed between the thin film transistor and the base substrate, and the light shielding layer includes a light shielding metal layer and a light reflection adjusting layer which are stacked on the base substrate, the light reflection adjusting layer covers the light shielding metal layer, and a reflectance of the light reflection adjusting layer is lower than a reflectance of the light shielding metal layer.

Array substrate and manufacturing method therefor, and display device

A light valve structure, a manufacturing method therefor, an operating method therefor, an array substrate and an electronic device are provided. The light valve structure includes a base substrate, a light-transmissive part and a light-shielding part. The light-transmissive part is disposed on the base substrate and light-transmissive, and it at least includes a first electrode. The light-shielding part is disposed on the light-transmissive part; a first end of the light-shielding part is fixed relative to the light-transmissive part; and the light-shielding part includes a base layer and a second electrode layered on the base layer. The light-shielding part is configured to be curled so as to be away from the light-transmissive part, and/or the light-shielding part is configured to be spread due to the mutual adsorption between the first electrode and the second electrode, so as to be superimposed on the light-transmissive part.

Light valve structure, manufacturing method therefor, operating method therefor, array substrate and electronic device

A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.

Photodetector and driving method thereof, display panel and display device

An array substrate, a method for fabricating the same, and a display device are disclosed. The array substrate includes a substrate and a plurality of pixel units on the substrate. Each pixel unit comprises at least a thin film transistor and an ILED. A drain of each thin film transistor is connected with a first pole of each ILED through a first electrode line, and a second pole of each ILED is connected with a second electrode line. Since the ILEDs have the advantages of small size, high brightness, high contrast, lightness of weight, low consumption, wide gamut, high efficiency, long lifetime, quick response or the like, the array substrate onto which the ILEDs are applied by transferring has a high resolution, an improved display effect or the like.

Array substrate with inorganic light-emitting diode and display device with inorganic light-emitting diode

It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.

Low-temperature polysilicon thin film transistor, method of manufacturing the same, and display substrate

A switch element, an array substrate, a display panel, and a display device are disclosed. The switch element includes: a first electrode, an insulation layer, where the first electrode is located on a first side of the insulation layer; a second electrode and a third electrode arranged spaced from each other, both of which are located on a second side of the insulation layer away from the first electrode; and a first oil ink located between the second electrode and the third electrode, where the first oil ink is electrically conductive, and configured to connect or disconnect the second electrode with or from the third electrode under control of the first electrode.

Switch element, array substrate, display panel, and display device

A light-emitting diode, a method for fabricating the same, and a display device are disclosed. The light-emitting diode includes a first and second electrode; a first carrier transporting layer, a light emitting layer, and a second carrier transporting layer which are arranged between the first and second electrode in this order The light-emitting diode further includes a second carrier transporting layer which is arranged between the light emitting layer and the second electrode. The second carrier blocking layer blocks a portion of the second carrier from being transported to the light emitting layer. This decreases the injecting efficiency of the second carrier, improves an injecting balance between the second carrier and the first carrier with a low injecting efficiency, avoids energy consumption in the form of heat, and increases the light output efficiency and lifetime of the light-emitting diode.

Light-emitting diode, method for fabricating the same, display device

A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being rotatable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation.

Sputtering apparatus and target changing device thereof

A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Method for manufacturing array substrate, array substrate and display panel

A transfer device and a transfer method using the same. The transfer device comprises a first conveyance roller, a transfer roller and a second conveyance roller. The transfer roller includes a roller body and stamp contacts formed on and protruded from the roller body. The stamp contacts can absorb elements, axes of the first conveyance roller. The transfer roller and the second conveyance roller are arranged in parallel with each other. The transfer roller is interposed between the first and second conveyance rollers. A first roll gap is formed between the first conveyance roller and the transfer roller to convey a medium substrate, and a second roll gap is formed between the second conveyance roller and the transfer roller to convey a target substrate. The transfer device and method can be used to transfer a great amount of elements to the substrate having large size.

Transfer device and transfer method

A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Quantum dot ink

A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Array substrate and manufacturing method thereof, display device

A transfer device with three transfer bases comprises: a first machine base that carries a substrate; and at least one transfer assembly that is located above the first machine base, wherein the at least one transfer assembly comprises: a second machine base that carries a target device; a third machine base that is located above the second machine base; and a transfer head that is disposed on the third machine base for acquiring the target device from the second machine base and transferring the target device to a prescribed location on the substrate. In this disclosure, since the transfer assembly is located above the first machine base, a path that the transfer head needs to move along to complete the transfer process is shorter, thereby improving the production efficiency.

Transfer device with three machine bases and transfer method thereof

A display panel and a manufacturing method therefor, a drive method and a display device. The display panel includes a first substrate and a second substrate which are arranged opposite to each other. The first substrate includes a first base substrate, and a plurality of first wire grid polarizers and a plurality of pixel units, which are successively located on a side of the first base substrate facing the second substrate in an array arrangement; polarization directions of two adjacent first wire grid polarizers are perpendicular to each other. The second substrate includes: a second base substrate, and a plurality of second wire grid polarizers in an array arrangement which are located on a side of the second base substrate facing the first substrate, and polarization directions of two adjacent second wire grid polarizers are perpendicular to each other.

Display panel and manufacturing method therefor, drive method and display device

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Beijing, China

Xiaolong He