Chinese Academy of Sciences

Rutgers, The State University of New Jersey

Xiaolong Du

Yonghui Zhang

Zengxia Mei

Yicheng Lu

Wen-Chiang Hong

Huili Liang

Handong Li

Qikun Xue

Jinfeng Jia

Zhaoquan Zeng

Hongtao Yuan

Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 &#x3bc;A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Oxide-based flexible high voltage thin film transistor

The present invention provides a preparation method for a fully-transparent thin film transistor, wherein a transparent conductive gate electrode layer of the fully-transparent thin film transistor is used as a photolithographic mask, a photoresist is exposed through a rear surface of a transparent substrate, the transparent substrate has a transmittance higher than 60% to an exposure light beam, and the transparent conductive gate electrode layer has a transmittance lower than 5% to the exposure light beam. In the preparation method for a fully-transparent thin film transistor provided by the present invention, by using a self-aligned technology, the process complexity and the feature size of the device can both be reduced.

Preparation method for fully transparent thin film transistor

The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination. The present invention is appropriate for manufacture of high-purity and superhigh-purity materials, particularly for manufacture of high-activity high-purity materials.

High vacuum in-situ refining method for high-purity materials and an apparatus thereof

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Beijing, China

Xiaolong Du