Rheinisch-Westfalische Technische Hochschule (Rwth) Aachen

Rheinisch-Westfalische Technische Hochschule Aachen

Xiaoling Lu

Matthias Wuttig

Shuai Wei

Julian Pries

Yudong Cheng

A phase-change memory () for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory (). A method for non-volatile storage of binary contents in a phase-change memory (), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory ().

Growing community of inventors

Aachen, Germany

Xiaoling Lu