Semiconductor Components Industries, LLC

Shanghai Phelix New Materials Co., Ltd.

Xiaoli Wu

Joseph Andrew Yedinak

Gary Horst Loechelt

Hao Wang

Thomas Neyer

Yong Zeng

Yong Xia

Xiang Zeng

Hocheol Jang

Sungkyu Song

Devices and methods are disclosed for facilitating faster switching of silicon-based and silicon carbide-based power transistors suitable for use in electric vehicles. The disclosed techniques can minimize the impact on turn-on and turn-off losses, while reducing gate voltage and drain voltage spikes during device switching. A fast/slow cell design incorporating shielded gate MOSFETs controls gate-to-drain capacitance and gate resistances to optimize suppression of voltage overshoot.

Method for suppressing voltage overshoots

The present application relates to a method and a device system for producing feed stock of ethylene steam cracker and a nano-carbon material from waste plastics, and the method comprises: firstly, subjecting a waste plastic to thermal pyrolysis to obtain hydrocarbon oil and gas from thermal pyrolysis; then, subjecting the hydrocarbon oil and gas from thermal pyrolysis to gas-liquid separation to obtain crude plastic pyrolysis oil and pyrolysis gas; subsequently, subjecting the pyrolysis gas to decarbonization to obtain a nano-carbon material, and sequentially subjecting the crude plastic pyrolysis oil to hydrocracking and fractionating to obtain the feed stock of ethylene steam cracker. The device system comprises a thermal pyrolysis unit, a gas-liquid separation unit, a hydrocracking unit, a fractionating unit, and a decarbonization unit. The method and device system provided in the present application can prepare the steam-cracking feedstock of ethylene steam cracker with a high proportion of chain alkanes, which can achieve a higher yield of target products when used to produce downstream products, and the production process has no carbon dioxide emission, and is green and clean. The device system provided in the present application has a simple structure and can be used in industrial application.

Method and device system for producing feed stock of ethylene steam cracker and nano-carbon material from waste plastics

A semiconductor device includes a region of semiconductor material of a first conductivity type. A body region of a second conductivity type is in the region of semiconductor material. The body region includes a first segment with a first peak dopant concentration, and a second segment laterally adjacent to the first segment with a second peak dopant concentration. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and is configured to provide a second channel region in the second segment, and adjoins the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

Insulated gated field effect transistor structure having shielded source and method

A semiconductor device includes a region of semiconductor material of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is in the region of semiconductor material. The body region includes a stripe region; a first segment in the stripe region and having a first peak dopant concentration, a first depth into the region of semiconductor material, and a first length along the first major surface; and a second segment in the stripe region laterally adjacent to the first segment, adjacent to the first major surface, and having a second peak dopant concentration, a second depth into the region of semiconductor material, and a second length along the first major surface. A source region of the first conductivity type is in the first segment but not in at least part of the second segment. An insulated gate electrode adjoins the first segment and is configured to provide a first channel region in the first segment, adjoins the second segment and configured to provide a second channel region in the second segment, and adjoins the first source region. A conductive structure is connected to the first segment, the second segment, and the source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

A semiconductor device includes a region of semiconductor material comprising a semiconductor layer of a first conductivity type and having a first major surface. A body region of a second conductivity type opposite to the first conductivity type is disposed in the second semiconductor layer extending from the first major surface. The body region comprises a first segment having a first doping concentration, and a second segment laterally adjacent to the first segment and adjacent to the first major surface having a second doping concentration less than the first doping concentration. A source region of the first conductivity type is disposed in the first segment but is not disposed in at least a portion of the second segment. An insulated gate electrode is disposed adjacent to the region of semiconductor material adjoining the first segment, the second segment, and the source region. A conductive layer is electrically connected to the first segment, the second segment, and the first source region. During a linear mode of operation, current flows first in the second segment but not in the first segment to reduce the likelihood of thermal runaway.

A diode with a current sensor is disclosed. The diode includes an anode region, a cathode region, and a channel-stop region. The diode further includes a sense resistor that is connected between the channel-stop region and the cathode region. When the diode is forward biased, a sense current flows through the sense resistor that corresponds to the forward current flowing through the diode. When the diode is reverse biased, the channel-stop region helps prevent a breakdown condition in the diode.

Diode with current sensor

In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can have a plurality of segments, at least one of the segments being disposed in the mesa. The trench shield electrodes can be disposed between segments of the implant enrichment region.

Termination implant enrichment for shielded gate MOSFETS

In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also include a plurality of trench shield electrodes each having a first portion disposed in the active region and a second portion disposed in the termination region. One or more of the trench shield electrodes can have a second portion that extends a first distance into the termination region, while one or more other trench shield electrodes can have a second portion that extends a second distance into the termination region, the second distance being less than the first distance. The trench shield electrode(s) having the second portion that extends the second distance into the termination region can be interleaved with the trench shield electrode(s) having the second portion that extends the first distance into the termination region.

Shield indent trench termination for shielded gate MOSFETs

In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can be intersected by the first trench shield electrode and the second trench shield electrode, and can have a portion disposed in the mesa of the semiconductor region, the portion extending from the trench of the first trench shield electrode to the trench of the second trench shield electrode.

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Shanghai, China

Xiaoli Wu