Chinese Academy of Sciences

Shanghai Lianxing Electronics Co., Ltd

Jiangsu Cas Igbt Technology Co., Ltd.

Baidu Online Network Technology (beijing) Co., Ltd.

China Agricultural University

Jiangsu R&d Center for Internet of Things

Xiaoli Tian

Yangjun Zhu

Shuojin Lu

Juan Zhang

Xinyu Liu

Hong Yu Chen

Yun Bai

Yidan Tang

Shengkai Wang

Chengyue Yang

Zhenxing Wu

Zhaohu Li

Wenliang Zhang

Liusheng Duan

Zhenchao Jia

Aibin Hu

Fangjun Li

Ronghuan Ren

Mingcai Zhang

Mingwei Du

Zhonglin Han

Weili Chu

The present invention discloses a method for increasing the sensitivity of a plant to a gibberellin inhibitor. The method for increasing the sensitivity of a plant to a gibberellin inhibitor provided by the present invention comprises the step of introducing an encoding gene of a protein into a recipient plant to obtain a transgenic plant; the transgenic plant has increased sensitivity to the gibberellin inhibitor compared to the recipient plant; the protein is a protein of the following a) or b) or c): a) a protein whose amino acid sequence is set forth in positions 1-821 of SEQ ID NO: 1; b) a protein whose amino acid sequence is set forth in SEQ ID NO: 1; c) a fusion protein obtained by attaching tag(s) to the N-terminus or/and C-terminus of a) or b). The experiments prove that the method for increasing the sensitivity of a plant to a gibberellin inhibitor of the present invention can be used to increase the sensitivity of plants to gibberellin inhibitors, and the plant height of plants can be regulated by the plant height-related protein HRP of the present invention.

Method for improving sensitivity of plant to gibberellin inhibitor and use thereof

Embodiments of the present disclosure disclose a method and apparatus for recommending news. A specific embodiment of the method comprises: receiving a voice request for playing news; analyzing the voice request, and determining a target attribute associated with the voice request from a preset user attribute set based on an analysis result; acquiring user attribute information corresponding to the target attribute; and selecting out target news from a to-be-recommended news database for recommendation based on the analysis result of the voice request and the user attribute information corresponding to the target attribute. Such embodiment realizes news recommendation based on voice interaction and is capable of improving the pertinence of news recommendation.

Method and apparatus for recommending news

A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.

Method for oxidizing a silicon carbide based on microwave plasma at an AC voltage

An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GeSi/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GeSi/Si multi-quantum well strained super lattice layer. The GeSi/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.

ITC-IGBT and manufacturing method therefor

A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.

Method of formation of a TI-IGBT

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Beijing, China

Xiaoli Tian