Huawei Technologies Co., Limited

Soltrium Advanced Materials Technology

Soltrium Technology, Ltd.

Soltrium Corp.

Sobtrium Advanced Materials Technology, Ltd.

Xiaoli Liu

Delin Li

Nongda Hu

Fengzhen Sun

Zheng Cao

Jie Zhang

Yu Ngok Li

Yu Li

Ran Guo

This application provides a flow control method, including: sending, by a first device, a first data packet to a second device in a first sending mode; determining, by the first device, a network congestion status; and sending, by the first device, a second data packet to the second device in the second sending mode, where the second sending mode is a sending mode determined by the first device based on the network congestion status, and the second data packet is a data packet to be sent after the first data packet.

Flow control method and apparatus

Embodiments of this application provide a method, includes: receiving a first data flow that includes a plurality of data units; inputting Ndata units of the plurality of data units and a first source marking unit into the first source queue; inputting Mdata units of the plurality of data units and a first target marking unit into the first target queue, wherein the Ndata units and the Mdata units are different data units; scheduling the Ndata units and the first source marking unit based on the first source marking unit and the first target marking unit; and scheduling the first target marking unit and the Mdata units, wherein the first target marking unit and the Mdata units are scheduled later than the Ndata units and the first source marking unit are scheduled.

Data scheduling method and switching device

Embodiments of the invention disclose a data transmission method, a device, and a computer storage medium to perform data transmission. A congestion status of a transmission port is obtained by a first device. The transmission port is a communications port used by the first device when a second device transmits data to the first device. The congestion status is used to indicate whether data congestion occurs on the transmission port. Indication information is sent to the second device when a mode switching condition is met. The indication information is used to instruct the second device to switch a transmission mode used when the second device transmits the data, so that the second device transmits the data to the first device in a switched transmission mode, and the mode switching condition is associated with the congestion status of the transmission port.

Data transmission method, device, and computer storage medium

The present disclosure relates to congestion flow identification methods. One example method includes obtaining, by a network device, a queue length of a non-congestion flow queue, where the non-congestion flow queue includes a data packet or description information of the data packet, determining, by the network device, a target output port of a target data packet when the length of the non-congestion flow queue is greater than or equal to a first threshold, where the target data packet is a data packet waiting to enter the non-congestion flow queue or a next data packet waiting to be output from the non-congestion flow queue, and when utilization of the target output port is greater than or equal to a second threshold, determining, by the network device, that a flow corresponding to the target data packet is a congestion flow.

Congestion flow identification method and network device

A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of LiO based on 100% by mole, with the molar ratio of MgO:PbO being 10:5&#x2dc;40:0.1, and the mole ratio of MgO:LiO being 10:30&#x2dc;40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Conductive paste for semiconductor device and preparation method

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO; 8.0-15.0% of LiO; 9.0-20.0% of SiO; 5.0-15.0% of BiO; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Front-side conductive paste for crystalline silicon solar cell, preparation method therefor, and solar cell

The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb&#x2014;Te based crystalline compounds having a fixed melting temperature in a range of 440&#xb0; C. to 760&#xb0; C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Method for manufacturing a front electrode of a semiconductor device

The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb&#x2014;Te&#x2014;O-based crystal corrosion binder characterized by melting temperatures in a range of 440&#xb0; C. to 760&#xb0; C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

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Shenzhen, China

Xiaoli Liu