Globalfoundries Inc.

Globalfoundries U.S. Inc.

Xiaoli He

Yanxiang Liu

Jerome Ciavatti

Bingwu Liu

Tao Chu

Myung Hee Nam

Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer.

Field-effect transistors with independently-tuned threshold voltages

A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

Non-planar semiconductor structure with preserved isolation region

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Mechanicville, NY, United States of America

Xiaoli He