Chinese Academy of Sciences

Boe Technology Group Co., Ltd.

National Institute of Metrology

Hitachi, Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Xiaomi Inc.

Hefei Boe Display Light Co., Ltd.

Xiaolei Wang

Wenwu Wang

Kai Han

Dapeng Chen

Shijie Chen

Jian Wang

Tao Li

Ping Chen

Xiang Wang

Hong Yang

Changqing Cai

Xiaoping Ren

Manhong Hu

Honglei Ji

Lei Zhang

Yi Wang

Dong Wang

Chao Zhao

Huaxiang Yin

Jiang Yan

Qian Li

Junfeng Li

Peng Yang

Mika Mizutani

Shi Xia Liu

Zhisheng Niu

Sheng Zhou

Chunguang Liu

Ruiheng Qiu

Jinjuan Xiang

Daowu Huang

Xueli Ma

Wang Wenwu

Sheng Du

Yanan Bao

The invention relates to a measuring device for measuring the mass of a weight, comprising a main frame, a main beam supported on the main frame and comprising a central knife and two side knives parallel with the central knife; a balancing system loaded on one end of the main beam and comprising a set of counterweights; a weighting system loaded on the other end of the main beam; a weight transportation system capable of transporting and loading a standard weight or a test weight into the weighting system and capable of unloading and transporting them away from the weighting system; and a control system. The central knife and the two side knives are made from metal with a high temperature-cryogenic cycling process. The central knife and the two side knives are configured to be adjusted in parallelism with a three-coordinates measuring machine. The control system is adapted to control the balancing system and the weighting system to synchronously load or unload the balancing system and the weighting system.

High accuracy measuring device for measuring large mass

The present disclosure provides a method for manufacturing a transistor having a gate with a variable work function, comprising: providing a semiconductor substrate; forming a dummy gate stack on the semiconductor substrate and performing ion implantation on an exposed area of the semiconductor substrate at both sides of the dummy gate stack to form source/drain regions; removing the dummy gate and annealing the source/drain regions; providing an atomic layer deposition reaction device; introducing a precursor source reactant into the atomic layer deposition reaction device; and controlling an environmental factor for the atomic layer deposition device to grow a work function metal layer. The present disclosure also provides a transistor having a gate with a variable work function. The present disclosure may adjust a variable work function, and may use the same material system to obtain an adjustable threshold voltage within an adjustable range.

Transistor having a gate with a variable work function and method for manufacturing the same

The invention discloses a measuring device for measuring the mass of a weight, comprising: a main frame; a main beam supported on main frame; a balancing system loaded on one end of the main beam; a weighting system, loaded on the other end of the main beam; a weight transportation system capable of transporting and loading a standard weight or a test weight into the weighting system and capable of unloading and transporting them away from the weighting system; and a control system comprising an optical sensor mounted in the main frame, a laser displacement sensor mounted on the main beam, a monitor, and a control unit connected electrically to the optical sensor, the laser displacement sensor and the monitor. The control system is adapted to compare a main beam first displacement data obtained by the optical sensor and a main beam second displacement data obtained by the laser displacement sensor to accurately measure the actual displacement of the main beam.

Measuring device for measuring large mass with optical refraction and displacement measuring

The present invention provides an airflow test method comprising: setting a plurality of test points within a test space; detecting the respective one-dimensional velocities of the airflow at each test point along a plurality of test directions, said plurality of test directions including at least three directions; calculating the actual direction and the actual velocity of the airflow at each test point based on the respective one-dimensional velocities of the airflow at the test point along the plurality of test directions. Also, the present invention provides an airflow test apparatus and a clean room control system. The present invention enables detecting the distribution of airflow in the test space with simple method.

Airflow test method, airflow test apparatus and clean room control system

The embodiment of present invention discloses a press fixture, including: a carrier board; a power unit and a pressing unit attached on the carrier board and arranged at a certain distance with each other; a retractable unit and a pushing block, one end of the retractable unit being fixedly connected to the power unit and the other end of the retractable unit being fixedly connected to the pushing block. The power unit drives the retractable unit to retract, so that the retractable unit brings the pushing block to move between the power unit and the pressing unit, for pressing the first piece to be pressed and the second piece to be pressed located between the pushing block and the pressing unit. The press fixture according to the embodiment of present invention reduces the work force and the work intensity of the operators.

Press fixture

A method for a device to update an electronic document includes obtaining data update information and use record information of the electronic document, the data update information including a first position in the electronic document where an updating is to be performed, the use record information including a second position; determining whether the first position in the data update information is before the second position in the use record information; adjusting the use record information according to the data update information, if it is determined that the first position in the data update information is before the second position in the use record information; and updating the electronic document according to the data update information and the adjusted use record information.

Method and device for updating electronic document and associated document use records

It is provided are a server including: a storage module for storing original files and characteristics of the original files; an encoding module for encoding the original files stored in the storage module to generate encoded symbols; an information acquisition module for communicating with at least one transmission node and acquiring state information from the at least one transmission node; a control module for calculating a number of the encoded symbols to be sent to the at least one transmission node for caching based on the characteristics of the original files stored in the storage module and the state information of the at least one transmission node acquired by the information acquisition module; and a communication module for sending the encoded symbols to the at least one transmission node based on the number of the encoded symbols calculated by the control module.

Server, data caching method, and communication system

A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.

Method for forming gate structure, method for forming semiconductor device, and semiconductor device

The present invention relates to the field of semiconductor manufacturing. The present invention provides a method of manufacturing a semiconductor device, which comprises: providing a semiconductor substrate; forming an interface layer, a gate dielectric layer and a gate electrode on the substrate; forming a metal oxygen absorption layer on the gate electrode; performing a thermal annealing process on the semiconductor device so that the metal oxygen absorption layer absorbs oxygen in the interface layer and the thickness of the interface layer is reduced. By means of the present invention, the thickness of the interface layer can be reduced on one hand, and on the other hand the metal in the metal oxygen absorption layer is made to diffuse into the gate electrode and/or the gate dielectric layer through the annealing process, which further achieves the effects of adjusting the effective work function and controlling the threshold voltage.

Method of manufacturing a semiconductor device

The present invention provides a semiconductor device, comprising: a semiconductor substrate having a first region and a second region; a first gate structure belong to a PMOS device on the first region; a second gate structure belong to an nMOS device on the second region; a multiple-layer first sidewall spacer on sidewalls of the first gate structure, wherein a layer of the multiple-layer first sidewall spacer adjacent to the first gat structure is an oxide layer; a multiple-layer second sidewall spacer on sidewalls of the second gate structure, wherein a layer of the multiple layers of second sidewall spacer adjacent to the first gat structure is a nitride layer. Application of the present invention may alleviate the oxygen vacancy in a high-k gate dielectric in a pMOS device, and further avoid the problem of EOT growth of an nMOS device during the high-temperature thermal treatment process, and therefore effectively improve the overall performance of the high-k gate dielectric CMOS device.

Semiconductor device and method of manufacturing the same

The present invention relates to a method of manufacturing a semiconductor device. After depositing the metal gate electrode material, a layer of oxygen molecule catalyzing layer having a catalyzing function to the oxygen molecules is deposited, and afterwards, a low-temperature PMA annealing process is used to decompose the oxygen molecules in the annealing atmosphere into more active oxygen atoms. These oxygen atoms are diffused into the high-k gate dielectric film through the metal gate to supplement the oxygen vacancies in the high-k film, in order to alleviate oxygen vacancies in the high-k film and improve the quality of the high-k film. According to the present invention, the oxygen vacancies and defects of high-k gate dielectric film will be alleviated, and further, growth of SiOinterface layer having a low dielectric constant caused by the traditional PDA high temperature process may be prevented. Thereby, the EOT of the entire gate dielectric layer may be effectively controlled, and the MOS device may be continuously scaled. Meanwhile, the present invention further provides a semiconductor device obtained according to the above-mentioned method.

A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.

A semiconductor device and a method of manufacturing the same are provided. A multi-component high-k interface layer containing elements of the substrate is formed from a ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment. Thus, the present invention may also avoid the growth of the interface layers and the degradation of carrier mobility. Furthermore, the present invention may further alleviate the problem of high interface state and interface roughness caused by direct contact of the high-k gate dielectric layer with high dielectric constant and the substrate, and thus the overall performance of the device is effectively enhanced.

Growing community of inventors

Beijing, China

Xiaolei Wang