Shanghai Kohler Electronics Ltd.

Shanghai Huali Integrated Circuit Corporation

Other

Xiaojun Zhou

Feiying Su

Qiang Xiao

Weiren Lin

The present application provides a method for making gates of different sizes compatible with the double patterning technology, comprising: forming a plurality of dummy gate structures and spacers on the sidewalls; covering the spacers and a region of large-sized gates with an SOC(silicon-on-carbon) layer; etching the SOC layer to expose the spacers of at least one dummy gate structure; respectively forming the first and the second SOC pattern structures, wherein the first SOC pattern structure covers the spacer of at least one dummy gate structure, and the second SOC pattern structure is disposed in region of the large-sized gates; etching the first SOC pattern structure to form a third SOC pattern structure, one side of the third SOC pattern structure covers one side of the spacer, wherein the other uncovered side of the spacer is used to define one side of the gate of medium-sized width.

Method for making gates of different sizes with double patterning technology

A faucet that includes a housing with a water supply assembly, a soap supply assembly, first and second sensing probe assemblies, and a controller provided in the housing, wherein a sensing region of the first sensing probe assembly is an upper portion of the housing, a sensing region of the second sensing probe assembly is a lower portion of the housing, an output terminal of each sensing probe assembly is electrically connected with an input terminal of the controller, and an output terminal of the controller is electrically connected with a control terminal of each of the water and soap supply assemblies. The controller controls the water supply assembly to start/stop water supply according to the sensing signal from the first or second sensing probe assembly, and controls the soap supply assembly to start/stop soap supply according to the sensing signal from the first or second sensing probe assembly.

Multifunction faucet

An outlet valve includes a valve body, a solenoid valve, and a manual operating member. The valve body includes a water inlet, a water outlet, a water storage cavity, a drain waterway, a first waterway, a second waterway, and a waterproof membrane. The first waterway is coupled to the drain waterway through a first drain opening. The second waterway is coupled to the drain waterway through a second drain opening. The waterproof membrane is configured to separate the water outlet cavity from the water storage cavity. The first waterway comprises a first plug coupled to an output end of the solenoid valve. The first plug is configured to control the opening and closing of the first drain opening. The second waterway comprises a second plug coupled to the manual operating member. The second plug is configured to control the opening and closing of the second drain opening.

Outlet valve

The present application provides a dual-port SRAM cell and a layout structure thereof, comprises a first and a second NMOS transistors, a first and a second PMOS transistors; the gates of the first and second NMOS transistors and the drains of the first and second PMOS transistors are connected to a word line; the source of the first NMOS transistor is connected to a first bit line; the source of the first PMOS transistor is connected to a second bit line; the source of the second NMOS transistor is connected to a third bit line; the source of the second PMOS transistor is connected to a fourth bit line; the drain of the first NMOS transistor and the gate of the first PMOS transistor are connected to a common input node of a latch.

Dual-port SRAM cell and layout structure thereof

The present disclosure provides a semiconductor structure and a method of fabricating the same, the semiconductor structure being a dual port static random access memory cell, the memory cell comprising a plurality of transistors, the plurality of transistors including a first pull-down transistor and a second pull-down transistor, the first pull-down transistor includes a plurality of first pull-down sub-transistors connected in parallel, the second pull-down transistor includes a plurality of second pull-down sub-transistors connected in parallel, plurality of gates of the plurality of first pull-down sub-transistors are parallel to each other, plurality of gates of the plurality of second pull-down sub-transistors are parallel to each other.

Semiconductor structure and manufacturing method thereof

A release mechanism including a fixed block with a rotating shaft for toilet lids is described. The release mechanism includes a shell, a fixed block, a rotating shaft, and a U-shaped clamping spring. The shell includes a notch for the rotating shaft. The fixed block includes a U-shaped recess that corresponds to the notch on the shell. The rotating shaft rests inside the U-shaped recess and the notch, connecting the toilet lid to the seat ring. The U-shaped clamping spring engages with the U-shaped recess and clamps the rotating shaft in place.

Growing community of inventors

Shanghai, China

Xiaojun Zhou