Cornell University

Xiaojun T Huang

Noel C MacDonald

Kanakasabapathi Subramanian

Liang-Yuh Chen

Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

Multi-finger z-actuator

Three dimensional high aspect ratio micromachining

A process is described for manufacturing submicron, ultra-high aspect ratio microstructures using a trench-filling etch masking technique. Deep trenches are etched into a substrate, the trenches are filled with an appropriate trench-filling material, and deep etching into the substrate is carried out with the trench-filling material serving as a mask.

Growing community of inventors

Ithaca, NY, United States of America

Xiaojun T Huang