China Electronics Technology Group Corporation No. 24 Research Institute

Xiaojun Fu

Ruzhang Li

Yuxin Wang

Hequan Jiang

Kaizhou Tan

Peijian Zhang

Yonghui Yang

Tian Xiao

Jiahao Zhang

Zhaohuan Tang

Yi Zhong

Peng Wang

The disclosure provides a power semiconductor device and manufacturing method thereof. A plurality of second resistive field plate structures extending through an epitaxial layer in a first direction into a substrate are arranged in a termination region of the epitaxial layer and the plurality of second resistive field plate structures are arranged radially in a first plane. A plurality of tightly coupled second resistive field plates extending from a side close to a cell region to a side far away from the cell region form a more uniform three-dimensional electric field distribution diverging around the cell region, which optimizes a guiding and binding effect on a charge in a space depletion region of the cell region and improves a withstand voltage performance of the whole power semiconductor device.

Power semiconductor device and manufacturing method thereof

Growing community of inventors

Chongqing, China

Xiaojun Fu