Semiconductor Manufacturing International (shanghai) Corporation

Delta Electronics (shanghai) Co., Ltd

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Semiconductor Manufacturing International (beijing) Corporation

Shanghai Tianma Micro-electronics Co., Ltd.

Hawe Hydraulik Se

Shanghai Jiao Tong University

Université Grenoble Alpes

Xiaojun Chen

Xuanjie Liu

Jinfa Zhang

Daofei Xu

Lushan Jiang

Liangliang Guo

Junde Ma

Dongsheng Zhang

Xia Feng

Xiage Yin

Jiaheng Wu

Kerui Xi

Baiquan Lin

Zhenyu Jia

Joël Eymery

Haifang Zhang

Christophe Durand

Yifan Xing

Xiaonan Han

Markus Neumair

Benjamin Hasner

Damien Salomon

Wuzhi Zhang

Jyishyang Liu

Daiwei Zhou

Wenbin Xie

Honglin Zeng

Shengwei Dai

Yingru Hu

Jun Fang

Enpeng Wang

Haochen Shi

An optical device and its fabrication method are provided. The method includes: providing a substrate including a coupling region; forming a first dielectric layer on the substrate; forming an initial waveguide groove in the first dielectric layer on the coupling region; forming a patterned layer on a surface of the first dielectric layer and in the initial waveguide groove, exposing at least a portion of a bottom of the initial waveguide groove; and using the patterned layer as a mask to etch the first dielectric layer, to form a waveguide structure on the substrate. The waveguide structure includes a waveguide end structure on the coupling region.

Optical device and fabrication method thereof

A device and method for diagnosing and configuring a hydraulic device based on a wireless local area network relates to diagnosis and configuration device technologies. The device includes a communication unit and mobile terminal. The communication unit reads hydraulic device data or changes device configuration, and process the data to generate webpage results. The mobile terminal transmits configuration requests, receives webpage results, and displays results in webpage form. The webpage results are formed by processing the acquired hydraulic device data at the communication unit side. The mobile terminal can complete the hydraulic device diagnosis and configuration, as long as it connects to the communication unit via WIFI and supports state of the art web content. The mobile terminal does not need additional installation of a matching diagnostic or configuration program, and is not limited as a specific device installed with a specific operating system; a general-purpose device may be used.

Device and method for diagnosing and configuring a hydraulic device based on wireless local area network

An antenna is provided in this application. The antenna includes multiple radiating units, at least two adjacent radiating units are correspondingly provided with a respective decoupling structure, the decoupling structure includes two microstrip line units, one microstrip line unit of the two microstrip line units includes at least one microstrip line, and the two microstrip line units are located on two opposite sides of two radiating units in a direction perpendicular to an arrangement direction of two adjacent radiating units. According to the antenna provided in the embodiments of the present disclosure, the decoupling structure composed of the microstrip line are disposed on two sides of the at least two adjacent radiating units, so that an indirect coupling field is formed by the decoupling structure, and the indirect coupling field counteracts a direct coupling field between adjacent radiating units.

Antenna

A method of forming a semiconductor structure includes: providing an initial substrate having a first region and a second region; forming a first substrate on the initial substrate; forming a first insulating layer on the first substrate; forming a second substrate on the first insulating layer; removing the second substrate in the second region to form a second insulating layer on the first insulating layer in the second region; and forming a plurality of passive devices on the second insulating layer in the second region and forming a plurality of active devices on the second substrate in the first region.

Semiconductor structure and method of forming the same

The present invention discloses a power adapter and an electronic device comprising the same. The power adapter comprises a housing, which has a plurality of end faces. The power adapter further comprises a power inlet socket, which is provided on any of the plurality of end faces. The end face on which the power inlet socket is provided, at least another one of the plurality of end faces, and the power inlet socket are formed as one body integrally.

Power adapter and electronic device comprising the power adapter

Power adapter

The present disclosure provides a power adapter, which includes a cover and electronic components. The cover includes an upper casing, which is provided with a protruding part on an inner sidewall thereof, and a lower casing, which fits with the upper casing to form an accommodating chamber. The sidewalls of the lower casing and the protruding part are fitted and then connected together, and the electronic components are disposed in the accommodating chamber.

TSV layout structure and TSV interconnect structure, and their fabrication methods are provided. An exemplary TSV interconnect structure includes a semiconductor substrate having a first region and a second region; and a plurality of through-holes disposed in the first region and the second region of the semiconductor substrate. An average through-hole density of the first region is greater than an average through-hole density of the entire semiconductor substrate. The average through-hole density of the entire semiconductor substrate is less than or equal to about 2%. A metal layer having a planarized surface is filled in the plurality of through-holes in the semiconductor substrate.

TSV layout structure and TSV interconnect structure, and fabrication methods thereof

A semiconductor device includes a substrate structure. The substrate structure includes a protruding engagement member having an inner periphery defining a groove and an outer periphery, an oxide layer on the protruding engagement member, and a bonding material layer on the oxide layer. The semiconductor device also includes a micro-electromechanical system (MEMS) substrate having a bonging pad. The bonding pad of the MEMS substrate is bonded to the bonding material layer of the substrate structure.

MEMS capping method

The present disclosure provides die cutting methods and semiconductor dies. A semiconductor substrate has a test region, isolation regions, and core regions. A device layer, an interconnection layer, and a soldering pad layer are formed on the semiconductor substrate. The soldering layer includes a plurality of soldering pads. A passivation layer covers the soldering pads and the interconnect layer, and is etched to form trenches on the soldering pads above the core regions and the test region. The passivation layer, the interconnect layer, and the device layer are etched to form isolation trenches at junctions of the isolation region and the test region, disconnecting the passivation layer, the interconnect layer and the device layer. A cutting process is performed along the test region, each of the semiconductor substrate, the device layer, the interconnect layer and the soldering pad layer is cut in two.

Semiconductor die and die cutting method

Adapter

A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.

Method of selective growth without catalyst on a semiconducting structure

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Shanghai, China

Xiaojun Chen