Alpha and Omega Semiconductor International LP

Tyre Research Institute of Shanghai Tyre & Rubber Co., Ltd

Xiaojing Xu

Madhur Bobde

Junho Lee

Zhiqiang Niu

Bum-Seok Suh

Zhaorong Zhuang

An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.

Intelligent power module containing IGBT and super-junction MOSFET

Tire

Growing community of inventors

Shanghai, China

Xiaojing Xu