Shenzhen China Star Optoelectronics Technology Co., Ltd.

Wuhan China Star Optoelectronics Technology Co., Ltd.

Xiaojiang Yu

Xin Hui Zhang

Jun Xia

Changyeh Lee

Tzuchieh Lai

Haibo Du

Wenying Li

Chuan Wang

Wei Zhan

Chang Yeh Lee

Ling Gao

Tzu-Chieh Lai

Meng Zhou

A color filter substrate and the fabricating method are provided. The color filter substrate comprises of the following elements. A glass substrate and a black matrix formed thereon. The black matrix includes a first ring protrusion on an edge thereof. Color resists, a planar layer and a photoresist spacer are disposed in sequence on the glass substrate. The planar layer includes a second ring protrusion formed thereon corresponding to a location of the first ring protrusion. A projection of the photoresist spacer on the glass substrate is inside the first ring protrusion and the second ring protrusion. A polyimide film is coated on the planar layer and the photoresist spacer. The second ring protrusions can block the backflow of the polyimide solution on the photoresist spacer, for reducing the halo area of polyimide film, increasing the open ratio of the panel and promoting the performance of the LTPS display.

Color filter substrate and fabricating method thereof

A low temperature poly-silicon (LTPS) display panel and a liquid crystal display device include a color filter substrate, an array substrate, and a frame sealing glue. The array substrate includes a glass substrate, a functional structure layer, and a third inorganic dielectric layer. The third inorganic dielectric layer connects with the frame sealing glue, and at least a row of first anti-crack holes are formed on the third inorganic dielectric layer adjacent to the frame sealing glue. The at least a row of first anti-crack holes include a plurality of the first anti-crack holes arranged in a direction along and in parallel with the frame sealing glue.

LTPS display panel and liquid crystal display device

The invention provides a TFT array substrate and LCD panel. The TFT array substrate adopts a Notch design, with a base substrate disposed with a groove at one end. The base substrate comprises a functional area and a peripheral area located outside the functional area, and the planarization layer on the base substrate has a first portion corresponding to the functional area, wherein the first portion adjacent to the groove is provided with at least one pit, and the depth of the pit is smaller than the thickness of the first portion. When the TFT array substrate and the CF substrate are assembled, after the LC is injected between TFT array substrate and CF substrate, the LC accumulation generated in the first portion of the planarization layer near the groove during diffusion is in the pit, thereby making the LC layer thickness uniform and improved quality of LCD panel.

TFT array substrate and LCD

An array substrate provided comprises a gate insulating layer, touch control element and first conducting wire disposed on a substrate; insulating interlayer covering gate insulating layer, touch control element and first conducting wire; protective wire arranged along the surface periphery of insulating interlayer; planarization layer covering insulating interlayer and protective wire, and second conducting wire disposed on surface of planarization layer; wherein touch control element is insulated from first conducting wire comprising an extension section, and free end of extension section is a first end; protective wire is electrically connected with first end; second conducting wire comprises a second and third end arranged oppositely and a contact position between second and third end; second end is electrically connected with touch control element, and contact position is electrically connected with a portion of first conducting wire inner substrate. A display panel and manufacturing method thereof are further provided.

Array substrate, display panel and manufacturing method thereof

A manufacturing method of an array substrate structure is disclosed, in which after a common electrode is formed, a reduction resistant layer is first formed on the common electrode before deposition of a second insulation layer in order to prevent the film quality of the common electrode from being affected by a reductive atmosphere generated in a process of directly depositing the second insulation layer on the common electrode thereby reducing the influence on the transmittal of the common electrode caused by the deposition of the second insulation layer on the common electrode and providing the common electrode with increased transmittal and enhancing displaying performance.

Array substrate structure and manufacturing method thereof

The present invention provides a display panel and a manufacture method thereof. By locating the matrix electrode corresponding to the black matrix on one side of the color film substrate, which is close to the liquid crystal layer, and because the matrix electrode is coupled to the common electrode signal, no voltage difference exists between the matrix electrode and the common electrode, and no matter in condition of being electrified or not electrified, the liquid crystal layer between the matrix electrode and the common electrode of the array substrate is not orientated and constantly appears in an opaque state so that no interference generates to light between adjacent pixels of the panel to eliminate the large view angle color washout of the panel and to improve the display quality of the LTPS display panel.

Display panel and manufacture method thereof

A complementary gate driver on array circuit employed for panel display includes a plurality of GOA units that are cascade connected, in which an nth GOA unit controls charge to an nth horizontal scanning line G(n) in a display area and includes a pull-up circuit module, a pull-down circuit module, a pull-down holding circuit module, a pull-up controlling circuit module, a pull-down circuit module of an nth gate signal point Q(n), and a bootstrap capacitor. The pull-up circuit module, the pull-down circuit module, the pull-down holding circuit module, the pull-down circuit module of the nth gate signal point Q(n), and the bootstrap capacitor are respectively coupled to the nth gate signal point Q(n) and the nth horizontal scanning line G(n), and the pull-up controlling circuit module is coupled to the nth horizontal scanning line G(n).

Complementary gate driver on array circuit employed for panel display

The present invention provides an array substrate structure and a manufacturing method thereof, in which after a common electrode () is formed, a reduction resistant layer () is first formed on the common electrode () before deposition of a second insulation layer () in order to prevent the film quality of the common electrode () from being affected by a reductive atmosphere generated in a process of directly depositing the second insulation layer () on the common electrode () thereby reducing the influence on the transmittal of the common electrode () caused by the deposition of the second insulation layer () on the common electrode () and providing the common electrode () with increased transmittal and enhancing displaying performance.

The present invention discloses a shift register unit, employed for providing a gate voltage to a nth pixel of a liquid crystal display, and comprising first to third P-type transistors, and gates of the first, second P-type transistors respectively receive gate voltages of n&#x2212;2th, n&#x2212;2th pixels, and first end of the first, second P-type transistors respectively receive first and second input signals, and both second ends of the first and second P-type transistors are coupled to a gate of the third P-type transistor; the gate voltages of the n&#x2212;2th, n&#x2212;2th pixels are respectively employed to control on-off of the first and second P-type transistors, and to make the first input signal on-off the third P-type transistor; n is a nature number larger than 2; a first end of the third P-type transistor is coupled to a first clock signal or a second clock signal, and a second end is employed as being a voltage output end to be coupled to the nth pixel. The present invention can diminish the dimension of the frame of liquid crystal display. The present invention also provides a gate driving circuit and a liquid crystal display.

Shift register unit, gate driving circuit and display device

A driving circuit of a display panel includes a switching unit, a clamping unit that prevents reverse current leakage, a reference signal line coupled to a low level signal, a pull-up unit, and a pull-up control unit that drives the pull-up unit. An input end of the pull-up unit receives a second clock signal, and an output end of the pull-up unit is coupled to a current scan line, where the current scan line is coupled to a pull-down maintain unit, and the pull-down maintain unit includes a first switching unit and a second switching unit. The first switching unit and the second switching unit are connected between the current scan line and the reference signal line in parallel, where a control end of the first switching unit and a control end of the second switching unit are coupled to an output end of the switching unit, a control end of the switching unit receives a first clock signal, and an input end of the switching unit receives the second clock signal through the clamping unit.

Driving circuit of display panel, display device, and method for driving the driving circuit of the display panel

The disclosure is related to a display panel having a touch function and manufacture thereof, and the composite electrode thereof. The display panel comprises a composite electrode. The composite electrode comprises a metal electrode and a metal oxide layer formed on the surface of the metal electrode. Through the above configuration, the dense and insulated metal oxide layer is formed on the surface of the metal electrode of the composite electrode to prevent the composite electrode from forming a short-circuit with the peripheral circuits. Thus the yield for the display panel with a touch function is increased and the cost is reduced.

Display panel with a touch function, manufacture thereof and composite electrode

A shift register unit provides a gate voltage to a nth pixel of a liquid crystal display and includes first to third N-type transistors. Gates of the first and second N-type transistors respectively receive gate voltages of n-2th and n-2th pixels. First ends of the first and second N-type transistors respectively receive first and second input signals. Second ends of the first and second N-type transistors are coupled to a gate of the third N-type transistor The gate voltages of the n-2th and n-2th pixels respectively control conduction of the first and second N-type transistors so as to allow the first and second input signals to selectively conduct on the third N-type transistor. A first end of the third N-type transistor is coupled to a first or second clock signal, and a second end is a voltage output end coupled to the nth pixel.

A self-capacitance in-cell touch screen including a glass array substrate, thin film transistors disposed on the substrate, and pixel electrodes electrically connected with the thin film transistors, a planarizing layer between the pixel electrodes and the thin film transistors. The transparent touch control sensing electrode, a first insulation layer, a second insulation layer, and a metal connection line are disposed on the planarizing layer in sequence. The metal connection line is electrically connected to the touch control sensing electrode through via holes. The first insulation layer is between the planarizing layer and the pixel electrode, and the second insulation layer is located on the pixel electrode. The touch control sensing electrodes are common electrodes to transfer a common voltage and a touch scan signal by time-sharing during a period of displaying one frame image. A method of manufacturing self-capacitance in-cell touch screens and a liquid crystal displays is also disclosed.

Self-capacitance in-cell touch screen and method of manufacturing the same, liquid crystal display

The present invention relates to a GOA circuit for tablet display and a display device. The GOA circuit comprises cascaded plurality of GOA units, the GOA unit comprises a pull-up control partand a transfer part; the transfer partcomprises a first thin film transistor T, the gate thereof is connected with the gate signal point Q(n), the drain and the source are respectively input the clock signal CK(n) and output the turn-on signal ST(n); the pull-up control part comprises: a second thin film transistor T, the gate thereof is input the turn-on signal ST(n&#x2212;2), the drain and the source are respectively connected with the horizontal scan line G(n&#x2212;2) and the gate signal point Q(n); a third tin film transistor T, the gate thereof is connected with the horizontal scan line G(n&#x2212;1), the drain and the source are respectively connected with the horizontal scan line G(n&#x2212;1) and the gate signal point Q(n). The present invention also provides a related display device. The present invention can improve the stability of the GOA circuit and the related display device in high temperature.

GOA circuit for tablet display and display device

A method for manufacturing polysilicon thin film transistor is disclosed, and the method comprises the following steps: forming a semiconductor material layer on a prefabricated substrate; forming an intermediate layer on the semiconductor material layer; forming a photoresist layer on the intermediate layer, and exposing the photoresist layer with a photomask for a first time; moving the prefabricated substrate in a predetermined direction relative to the photomask, and exposing the photoresist layer with the photomask for a second time; forming a photoresist region which comprises a central part and a wing part and a hollowed-out region which contains no photoresist material in the photoresist layer; and forming an ion lightly doped region corresponding to the wing part and an ion heavily doped region corresponding to the hollowed-out region in the semiconductor material layer.

Growing community of inventors

Guangdong, China

Xiaojiang Yu