Power Integrations, Inc.

Xiaohui Wang

Jamal Ramdani

LinLin Liu

Alexey Kudymov

An HFET includes a first and second semiconductor material. A first composite passivation layer includes a first insulation layer and a first passivation layer, and the first passivation layer is disposed between the first insulation layer and the second semiconductor material. The HFET includes a second passivation layer, where the first insulation layer is disposed between the first passivation layer and the second passivation layer. A gate dielectric is disposed between the second semiconductor material and the first passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material, and a gate electrode is disposed laterally between the source electrode and the drain electrode. A first gate field plate is disposed between the first passivation layer and the second passivation layer and electrically connected to the gate electrode, and a second gate field plate is disposed above first gate field plate.

Method of fabricating a transistor

Protective insulator for HFET devices

A high-voltage field effect transistor a heterojunction is disposed between the first and second semiconductor material. A first composite passivation layer includes a first insulation layer and a first passivation layer, and a second composite passivation layer includes a second insulation layer and a second passivation layer. The first insulation layer is disposed between the first passivation layer and the second passivation layer, and the second passivation layer is disposed between the first insulation layer and the second insulation layer. A gate dielectric disposed between the second semiconductor material and the first passivation layer. A gate electrode is disposed above the gate dielectric. A first gate field plate is disposed between the first passivation layer and the second passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material.

A high-voltage field effect transistor (HFET) includes a first semiconductor material, a second semiconductor material, and a heterojunction. The heterojunction is disposed between the first semiconductor material and the second semiconductor material. The HFET also includes a plurality of composite passivation layers, where a first composite passivation layer includes a first insulation layer and a first passivation layer, and a second composite passivation layer includes a second insulation layer and a second passivation layer. A gate dielectric is disposed between the first passivation layer and the second semiconductor material. A gate electrode is disposed between the gate dielectric and the first passivation layer. A first gate field plate is disposed between the first passivation layer and the second passivation layer. A source electrode and a drain electrode are coupled to the second semiconductor material, and a source field plate is coupled to the source electrode.

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East Brunswick, NJ, United States of America

Xiaohui Wang