Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Optoelectronics Co., Ltd.

Beijing Boe Optoelectronics

Xiaohui Jiang

Jiaxiang Zhang

Jian Nan Guo

Changjiang Yan

Zhenyu Xie

Tiansheng Li

Xu Chen

Shaoying Xu

Xiaowei Jiang

Zongmin Tian

A poly-silicon thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The method for manufacturing a poly-silicon thin film transistor includes forming a poly-silicon layer on a base substrate so that the poly-silicon layer includes a first poly-silicon area, second poly-silicon areas located at the both sides of the first poly-silicon area and third poly-silicon areas located at a side of the second poly-silicon areas away from the first poly-silicon area; forming a barrier layer between a gate electrode and a gate insulation layer by a dry etching method so that the barrier layer corresponds to the first poly-silicon area; and with the barrier layer as a mask doping the second poly-silicon areas to form lightly doped areas. By this method, the lightly doped areas may have the same length, and thus the problem of excessive leakage current is avoided.

Poly-silicon thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device

A fabrication method includes preparing a base substrate, the base substrate including a pixel region and a region of gate on array (GOA); forming a pattern including a gate electrode and a pattern of an active layer on the base substrate, and forming a gate lead on the region of GOA, by a first patterning process; forming a pattern of a gate insulating layer by a second patterning process; forming a pattern including a source/drain electrode by a third patterning process; forming a pattern of a planarization layer by a fourth patterning layer; and forming a pattern including a pixel electrode by a fifth patterning layer. Here, the pattern including the gate electrode and the pattern including the active layer are formed by one patterning process, which can reduce the number of masks in the fabrication process of the array substrate, improve production efficiency and save the cost.

Array substrate, fabrication method thereof and display device

Disclosed are a TFT array substrate, a method for fabricating the same and a display device. The TFT array substrate includes a plurality of pixel units, each of the plurality of pixel units includes a common electrode (). The common electrode (), is comb-shaped, and includes a plurality of strip electrodes and a plurality of slits. Each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit. As the comb-shaped common electrode with both a reflective region and a transmissive region is formed through a single patterning process, the fabrication process is simplified and the fabrication cost and difficulty are reduced.

Thin film transistor array substrate, method for fabricating the same and display device

A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.

Thin film transistor, method for fabricating the same, array substrate and display device

The present invention provides a low-temperature polysilicon thin film transistor array substrate and a method of fabricating the same, and a display device. The array substrate comprises: a substrate; a polysilicon active layer provided on the substrate; a first insulation layer provided on the active layer; a plurality of gates and a gate line provided on the first insulation layer; a second insulation layer provided on the gates; a source, a drain, a data line and a pixel electrode electrically connected with the drain, which are provided on the second insulation layer, the source covers the plurality of gates. The plurality of gates are provided directly below the source, so that the leakage current is reduced and the aperture ratio of panel is improved.

Low-temperature polysilicon thin film transistor array substrate and method of fabricating the same, and display device

An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.

Etching time detection means and method for etching device

An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises: a base substrate (), thin-film transistors (TFTs), an isolation layer () and an organic resin layer () formed on the base substrate (), and a common electrode layer () formed on the organic resin layer (). The isolation layer () covers source electrodes () and drain electrodes () of the TFTs; the organic resin layer () covers the isolation layer () and is provided with first through holes () corresponding to the drain electrodes () of the TFTs; the isolation layer () is provided with second through holes () communicated with the first through holes () to expose partial drain electrodes (); and the dimension of the second through holes () is greater than that of the first through holes (). The array substrate, the manufacturing method thereof and the display device resolve the problem of forming dark dots, ensure the product quality, reduce the waste of production materials, and reduce the production cost.

Array substrate, manufacturing method thereof and display device

The present invention discloses an array substrate, a preparation method for the array substrate, and a display device, wherein the array substrate comprises a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode, and a pixel electrode arranged on a substrate, the active layer includes an electric conduction area, a coverage area covered by the source electrode and the drain electrode, and an exposure area surrounding the coverage area, and the pixel electrode is lapped on the upper surfaces of the drain electrode, the exposure area of the active layer, and the gate insulation layer. According to the present invention, the pixel electrode breaks in the area, with the large gradient angle, of the drain electrode caused by slip-down due to gravity can be avoided, and the lap joint for the pixel electrode and the drain electrode is effectively facilitated.

Array substrate, preparation method for array substrate, and display device

The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower source, an upper drain and a lower drain. The upper active layer and the lower active layer are disposed at an upper side and a lower side of the gate, respectively, the lower source and the lower drain are connected to the lower active layer, respectively, and the upper source and the upper drain are connected to the upper active layer, respectively. The embodiments of the present invention also provide an array substrate including the thin film transistor, a method of fabricating the array substrate, and a display device including the array substrate.

Thin film transistor, array substrate and method of fabricating the same, and display device

A method of manufacturing a TFT array substrate and a TFT array substrate and a display device are provided. During a pattern of a gate layer (), a pattern of the gate insulating layer () and a pattern of the active layer are made, a gate layer () material, a gate insulating layer () material and an active layer material are deposited successively. The gate layer (), the gate insulating layer () and the active layer are made through one patterning process. At least one mask process is saved and the process complexity is reduced.

TFT array substrate, manufacturing method thereof, and display device

An embodiment of the present application discloses a capacitive touch panel including a base substrate, on which a plurality of transparent conductive patters being capable of transmitting touch signals and not overlapping with each are provided, and each transparent conductive pattern is an integrated pattern made of a same material layer. An embodiment of the present application further provides a method for manufacturing a capacitive touch panel, which includes forming a plurality of transparent conductive patterns on a base substrate through one mask patterning process. An embodiment of the present application further includes a display device comprising the capacitive touch panel as described above. An embodiment of the present application can save masks and can manufacture capacitive touch panels at a low cost. Furthermore, the embodiments of the present application have advantages of high production efficiency and of high yield rate.

Capacitive touch panel, display device and method for manufacturing the touch panel

A method for fabricating a sensor, comprising: forming a pattern of a bias line on a base substrate by using a first patterning process; forming a pattern of a transparent electrode, a pattern of a photodiode, a pattern of a receive electrode, a pattern of a source electrode, a pattern of a drain electrode, a pattern of a data line and a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer, a pattern of a first passivation layer, a pattern of a gate electrode and a pattern of a gate line by using a third patterning process. The above method reduces the number of used mask in the fabrication processes as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the yield rate.

Method for fabricating sensor

Embodiments of the invention discloses a space imaging overlay inspection method and an array substrate; the method comprises: forming a thin film having a space imaging overlay mark by photolithography; when the thin film is a transparent thin film, performing a color developing treatment on the space imaging overlay mark on the transparent thin film, so as to make the space imaging overlay mark appear in a non-transparent color; and conducting a space imaging overlay inspection between the transparent thin film and an adjacent thin film by using the space imaging overlay mark appear appearing in the non-transparent color. In the method, by conducting the color developing treatment to the space imaging overlay mark on the transparent thin film and then conducting positioning, the space imaging overlay mark can be positioned quickly and accurately, thus alignment condition between two photolithography procedures can be detected swiftly and effectively.

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Beijing, China

Xiaohui Jiang