Huawei Technologies Co., Limited

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Xiaohui Huang

Deyuan Xiao

Min-Hwa Chi

Jingang Wu

Xiaodong Gong

Zhan Peng

Miaohua Li

Lijun Song

The present disclosure relates to a method and an apparatus for configuring a redundancy data center in a cloud computing architecture. The method includes receiving a request for configuring a redundancy data center DC for a specified network service NS; acquiring, from an affinity relationship information bank of application objects according to the request for configuring a redundancy DC, information about an affinity and/or anti-affinity relationship among application objects that support the specified network service, where application objects having an affinity relationship rare deployed in a same DC, and application objects having an anti-affinity relationship are deployed in different DCs; and selecting, from deployed DCs, a redundancy DC for the specified network service according to redundancy resource information of the deployed DCs and the acquired information about an affinity and/or anti-affinity relationship.

Method and apparatus for configuring redundancy data center in cloud computing architecture

A resistive random access memory utilizing gate induced drain leakage current as the read operation current and the write operation current and a method of operation the same, wherein the resistive random access memory including a plurality of arrayed memory cells, a plurality of bit-lines and a plurality word-lines, each memory cell including: a switching resistor having a first terminal and a second terminal, the first terminal of the switching resistor being connected to one bit-line; and a MOSFET being connected to the second terminal and having a gate, a source, a drain and a substrate, the gate being connected to one word-line, the read operation current and the write operation current of the memory cell being gate induced drain leakage current of the MOSFET. The RRAM array presented in this invention has superior scalability for resistors as well as transistors, which leads to a memory array with higher density.

Resistive random access memory and the method of operating the same

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Shanghai, China

Xiaohui Huang