Globalfoundries U.S. Inc.

Shanghai Hua Hong Nec Electronics Company, Limited

Baidu (china) Co., Ltd.

Xiaohua Cheng

Nan Wang

Wei Zhao

Qing Xu

Xiaoli Hu

Shengan Xiao

Xiaoxiao Li

Fei Huang

Xueqiang Dai

Peizhi Xu

Binxin Liu

Xiaosong Li

Chunli Chen

Shouke Qin

You Han

Yuqing Sun

Embodiments of the disclosure provide a circuit structure and related method to compensate for sense amplifier leakage. A circuit structure according to the disclosure includes a reference voltage generator coupling a supply voltage and a reference line to a sense amplifier. A multiplexer within the reference voltage generator is coupled to the reference line. The multiplexer includes a plurality of transistors each having a gate terminal coupled to ground.

Circuit structure and related method to compensate for sense amplifier leakage

A method and apparatus for presenting a search result. The method comprises: receiving a current search term input by a user; determining user information about a user, and determining a pre-established first model corresponding to the user according to user information, the first model recording historical data of the user, and the historical data comprising a historical search term and a corresponding historical selection result; determining, in the historical data, a historical search term matched with the current search term, determining a historical selection result corresponding to the matched historical search term, and determining an online recommendation result according to the historical selection result; and presenting a search result to the user, the search result comprising the online recommendation result or a result obtained by processing the online recommendation result. The disclosed method can provide a personalized search service, so that the search result better meets the user's needs.

Method and apparatus for presenting search result

A method of etching and tilling deep trenches is disclosed, which includes: forming an ONO(oxide-nitride-oxide) sandwich layer on a semiconductor substrate; forming deep trenches by using top oxide of the sandwich layer as a stop layer; removing the top oxide and middle SiN of the sandwich layer; tilling the deep trenches with epitaxial film or polysilicon film; polishing the wafer to get a planarized surface by stopping at the surface of the bottom oxide layer; removing the bottom oxide layer.

Method for etching and filling deep trenches

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Shanghai, China

Xiaohua Cheng