United Microelectronics Corp.

Chartered Semiconductor Manufacturing Ltd (Corporation)

Xiaohong Jiang

Ching Hwa Tey

Zhaoyao Zhan

Qianwei Ding

Yisuo Li

Francis Benistant

Jing Feng

Ching-Hwa Tey

Wei Pang

An image sensor structure includes a semiconductor substrate; an interconnection layer on the semiconductor substrate; nano-pillar structures, each including a first doped layer, a second doped layer and a third doped layer stacked in sequence; conductive structures, respectively electrically connected to the first doped layer and the interconnection layer, the second doped layer and the interconnection layer, and the third doped layer and the interconnection layer; a first insulating layer on the interconnection layer and wrapping the nano-pillar structures and the conductive structures, wherein the first doping layer is exposed on the first insulating layer; a transparent barrier layer on the first insulating layer; and a photoelectric thin film structure on the first insulating layer and electrically connected to the interconnection layer. The photoelectric thin film structure includes photoconductive film portions. The image sensor structure has a good isolation effect between adjacent pixels and effectively avoids optical crosstalk.

Image sensor structure and manufacturing method thereof

An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.

Image sensor structure including nanowire structure and manufacturing method thereof

A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.

Photosensitive semiconductor device including heterojunction photodiode

A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.

The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

Image sensor and manufacturing method thereof

A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a photodiode.

Photosensitive semiconductor device including top surface photodiode

A GAA transistor includes a semiconductor substrate. A first shallow trench isolation (STI) is embedded in the semiconductor substrate. A top surface of the first STI is lower than a top surface of the semiconductor substrate. A nanowire crosses the first STI and is disposed on the first STI. A gate structure contacts and wraps around the nanowire. A source electrode contacts a first end of the nanowire. A drain electrode contacts a second end of the nanowire.

Gate-all-around (GAA) transistor and method of fabricating the same

A method for stabilizing bandgap voltage includes the steps of: providing a first layout pattern designated with a first voltage; reducing a critical dimension of the first layout pattern for generating a second layout pattern corresponding to a second voltage; matching the second voltage with a target voltage; and then outputting the second layout pattern to a mask. Preferably, the first layout pattern and the second layout pattern include polysilicon resistor patterns.

Method for stabilizing bandgap voltage

A device structure and method for forming graded junction using a implant process. Embodiments of the invention comprise implanting ions into said silicon substrate to form doped regions adjacent to said gate. The orientation of the channel region in the Si crystal structure (channel direction &#x3c;100&#x3e;) in combination with the large angle tilt and twist implant process produce doped regions that have a more graded junction. The orientation and implant process creates more channeling of ions. The channeling of ions creates a more graded junction. When implemented on a HV MOS TX, the graded junction of the LDD increases the breakdown voltage. Another embodiment is a FET with an annular shaped channel region.

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Singapore, Singapore

Xiaohong Jiang