Boe Technology Group Co., Ltd.

South China University of Technology

Boe Technology Groupco., Ltd.

Xiaoguang Xu

Lei Wang

Liangchen Yan

Junbiao Peng

Linfeng Lan

Guangcai Yuan

Chungchun Lee

Chunwei Wu

Yanfeng Wang

Fei Liu

Zhuo Chen

Yingzi Wang

Xue Feng Gao

Yanzhao Li

Shuai Wang

Jie Sun

Guangkui Qin

Dongsheng Huang

Hui Hua

Qinghui Zeng

Dexing Qi

Jiliang Wang

Chung-Chun Lee

Li Zhou

This application discloses a touch panel and a human-computer interaction method based on a touch panel. The touch panel includes a base substrate, at least one pressure detector and at least one actuator arranged on the base substrate, and a driving circuit. The at least one pressure detector is electrically connected to the driving circuit, and the driving circuit is electrically connected to the at least one actuator.

Touch panel and human-computer interaction method based on touch panel

The present disclosure relates to an antenna apparatus. The antenna apparatus may include a first substrate; a second substrate opposite the first substrate; a first antenna layer; an insulating layer; and a conductive layer. The first antenna layer may comprise a plurality of antenna units, each of the plurality of antenna units may comprise a radiation patch and is configured to receive the signals in one of the different frequency ranges. The insulating layer may comprise a plurality of sub-insulating layers; the conductive layer may comprise a plurality of conductive electrodes; and the plurality of the sub-insulating layers, the plurality of the conductive electrodes, and the plurality of the antenna units may be in one-to-one correspondence. The radiation patch, at least one of the plurality of conductive electrodes, and at least one of the plurality of sub-insulating layers may constitute a rectifier diode structure.

Antenna apparatus and preparation method thereof

A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Semiconductor thin-film and manufacturing method thereof, thin-film transistor, and display apparatus

The present disclosure provides an optical sensing unit, a touch panel, a method for manufacturing the optical sensing unit, a method for manufacturing the touch panel, and a display device. The optical sensing unit includes a Photo thin film transistor (TFT), a storage capacitor for storing a leakage current generated by the Photo TFT, and a Readout TFT for reading out an electric signal stored in the storage capacitor. The method for manufacturing the optical sensing unit includes a step of forming a gate electrode of the Readout TFT capable of shielding an active layer of the Readout TFT and preventing the active layer from being exposed to an ambient light beam.

Optical sensing unit, touch panel, method for manufacturing optical sensing unit, method for manufacturing touch panel, and display device

A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device

A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

Thin-film transistor (TFT) and manufacturing method thereof

The present invention discloses an organic electroluminescent display device and a display apparatus, wherein the organic electroluminescent display device employs an optical film lamination as a base substrate or a packaging cover plate, the optical film lamination includes a circular polarizer film, a water-oxygen resistant film and a color resistant film that are located on a supporting substrate, thus it has an antireflection function, a good water-oxygen resistance as well as a full-color display function, so that not only the problem of fussy process and high cost of an OLED display device caused by film application can be solved, but also the problem that the thickness of a flexible OLED display device is increased and thus the device is difficult to be rolled up due to film application is avoided; also, the OLED display device has the advantages of being lighter and thinner and having a better display effect, etc.

Organic electroluminescent display device and display apparatus

The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

Method of fabricating electrodes, method of fabricating thin film transistor, method of fabricating array substrate, thin film transistor, array substrate, and display apparatus

A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (), a gate insulating layer (), an active layer () and source and drain electrodes () of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.

Thin film transistor, array substrate and manufacturing method thereof, and display device

The present invention provides a light-emitting apparatus, a method for forming a light-emitting apparatus, and a display apparatus. The light-emitting apparatus comprises at least one OLED light-emitting unit and at least one quantum dot light-emitting unit, wherein the at least one quantum dot light-emitting unit and the at least one OLED light-emitting unit are arranged in series.

Light-emitting apparatus, method for forming light-emitting apparatus, and display apparatus

In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

Thin-film-transistor, thin-film-transistor array substrate, fabricating methods thereof, and display panel

This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

Oxide semiconductor thin film, thin film transistor, manufacturing method and device

The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

Thin film transistor, array substrate, their manufacturing methods, and display device

A touch panel, a method for fabricating the same and a touch display device are disclosed. The touch panel includes touch units, each of which includes: a capacitor having a first terminal connected to a first bias voltage; a first transistor having an amorphous silicon active layer, one of a source and a drain of the first transistor is connected to a third bias voltage and the other is connected to a second terminal of the capacitor; a second transistor having an oxide semiconductor active layer, a gate of the second transistor is connected to a scan line, one of a source and a drain of the second transistor is connected to the second terminal of the capacitor and the other is connected to a data line. The touch panel further includes a light-shielding layer; an aperture portion is disposed on a part of the light-shielding layer.

Touch panel, method for fabricating the same and touch display device

A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

Growing community of inventors

Beijing, China

Xiaoguang Xu